UT4446

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 5

www.unisonic.com.tw

QW-R502-251.A

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Continuous Drain Current

15

A

Pulsed Drain Current

40

A

Avalanche Current

20

A

Repetitive avalanche energy L=0.1mH

50

mJ

Power Dissipation

3

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction-to-Ambient

59

75

°C/W

Junction-to-Case

16

24

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

30

V

Zero Gate Voltage Drain Current

1

µA

Gate-Body Leakage Current

100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

1

2.2

3

V

On State Drain Current

40

A

6.9

8.5

Static Drain-Source On-Resistance

11.8

14.5

mΩ

Forward Transconductance

27

S

DYNAMIC PARAMETERS

Input Capacitance

1520 1825

pF

Output Capacitance

306

pF

Reverse Transfer Capacitance

214

pF

SWITCHING PARAMETERS

Turn-ON Delay Time

7.2

56

ns

Turn-ON Rise Time

8.2

80

ns

Turn-OFF Delay Time

22

392

ns

Turn-OFF Fall-Time

6.7

216

ns

4.5V

17

20

Total Gate Charge

10V

33.7

40

nC

Gate Source Charge

6.2

nC

Gate Drain Charge

10

nC

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Diode Forward Voltage

0.71

1

V

Maximum Body-Diode Continuous

Current

4

A

Body Diode Reverse Recovery Time

24

30

ns

Body Diode Reverse Recovery

Charge

19

nC