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UT4812Z Datasheet(PDF) 3 Page - Unisonic Technologies |
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UT4812Z Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 4 page UT4812Z Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R502-350.B ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 2) ID 6.9 A Pulsed Drain Current (Note 3) IDM 30 A Power Dissipation PD 2 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ + 150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Surface Mounted on 1in 2 pad area, t ≤10sec 3. Pulse width limited by TJ(MAX) THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 110 °C /W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS =0 V, ID =250µA 30 V Drain-Source Leakage Current IDSS VDS =30V, VGS =0 V 1 µA Gate-Source Leakage Current IGSS VDS =0 V, VGS = ±20V 5 µA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS =VGS, ID =250 µA 1 1.9 3 V Drain-Source On-State Resistance (Note) RDS(ON) VGS =10V, ID =6.9A 22.5 28 mΩ VGS =4.5V, ID =5.0A 34.5 42 mΩ DYNAMIC PARAMETERS Input Capacitance CISS VDS =15 V, VGS =0V, f=1MHz 680 820 pF Output Capacitance COSS 102 pF Reverse Transfer Capacitance CRSS 77 108 pF SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) VGS=10V, VDS=15V, RL=2.2Ω, RGEN =3Ω 4.6 7 ns Turn-ON Rise Time tR 4.1 6.2 ns Turn-OFF Delay Time tD(OFF) 20.6 30 ns Turn-OFF Fall-Time tF 5.2 7.5 ns Total Gate Charge QG VDS =15V, VGS =10V, ID =6.9A 13.84 17 nC Gate Source Charge QGS 1.82 nC Gate Drain Charge QGD 3.2 nC SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage (Note) VSD IS=1A 0.76 1 V Maximum Continuous Drain-Source Diode Forward Current IS 3 A Body Diode Reverse Recovery Time trr IF=6.9 A, dI/dt=100A/μs 16.5 20 ns Body Diode Reverse Recovery Charge QRR IF=6.9 A, dI/dt=100A/μs 7.8 10 nC Note: Pulse width ≤300μs, duty cycle≤2%. |
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Similar Description - UT4812Z_12 |
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