Electronic Components Datasheet Search |
|
UT4810D-S08-T Datasheet(PDF) 3 Page - Unisonic Technologies |
|
UT4810D-S08-T Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 5 page UT4810D Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 5 www.unisonic.com.tw QW-R502-252 .A ABSOLUTE MAXIMUM RATINGS (Ta = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT MOSFET 30 Drain-Source Voltage Schottky VDSS 30 V Gate-Source Voltage MOSFET VGSS ±20 V Continuous Drain Current (TJ=150°C) MOSFET ID 7.5 A Pulsed Drain Current MOSFET IDM 50 A Continuous Source Current MOSFET IS 1.25 A Average Forward Current Schottky IF 2.4 A Pulsed Forward Current Schottky IFM 40 A Avalanche Current IAS 25 A Single-Pulse Avalanche Energy L=0.1mH EAS 78 mJ MOSFET 1.38 Power Dissipation Schottky PD 1.31 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL MIN TYP MAX UNIT MOSFET 73 90 Junction-to-Ambient Schottky θJA 77 95 °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Zero Gate Voltage Drain Current (MOSFET+ Schottky) IDSS VDS=30V, VGS=0V 0.007 0.100 mA Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V ±100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 1 3 V On State Drain Current ID(ON) VDS≥5V, VGS=10V 20 A VGS=10V, ID=10A 10.5 13.5 Static Drain-Source On-Resistance RDS(ON) VGS=4.5V, ID=5A 16 20 mΩ DYNAMIC PARAMETERS Gate Resistance RG 0.2 0.55 0.9 Ω SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) 17 30 ns Turn-ON Rise Time tR 13 20 ns Turn-OFF Delay Time tD(OFF) 45 90 ns Turn-OFF Fall-Time tF VDD=15V, RL=15Ω, RG=6 Ω, ID≈1 A, VGEN=10V 15 25 ns Total Gate Charge QG 14.5 22 nC Gate Source Charge QGS 6.3 nC Gate Drain Charge QGD VDS=15V, VGS=5V, ID=10A 4.7 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=3.0 A, VGS =0 V 0.485 0.53 V Body Diode Reverse Recovery Time tRR IF=3.0 A, dI/dt=100A/μs 36 70 ns |
Similar Part No. - UT4810D-S08-T |
|
Similar Description - UT4810D-S08-T |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |