UT4822G-S08-R datasheet(3/6 Pages) UTC

Part #	UT4822G-S08-R

Description	DUAL N-CHANNEL ENHANCEMENT MODE

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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3 / 6 page

UT4822

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-149.D

ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

ID

8.5

A

Pulsed Drain Current

IDM

40

A

Power Dissipation

PD

2

W

Junction Temperature

TJ

+150

°С

Storage Temperature

TSTG

-55 ~ +150

°С

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width limited by TJ(MAX)

THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction to Ambient

θJA

74

110

°С/W

ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=250uA

30

V

Drain-Source Leakage Current

IDSS

VDS=24V, VGS=0V

1

uA

Gate-Source Leakage Current

IGSS

VDS=0V, VGS=±20V

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250uA

1

1.8

3

V

VGS=10V, ID=8.5A

13.4

16

mΩ

Drain-Source On-State Resistance

RDS(ON)

VGS=4.5V, ID=6A

21

26

mΩ

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

1040 1250

pF

Output Capacitance

COSS

180

pF

Reverse Transfer Capacitance

CRSS

VGS=0V,VDS=15V,f=1.0MHz

110

pF

SWITCHING CHARACTERISTICS

Total Gate Charge

QG

19.2

23

nC

Gate-Source Charge

QGS

2.6

nC

Gate-Drain Charge

QGD

VDS=15V, VGS=10V, ID=8.5A

4.2

nC

Turn-ON Delay Time

tD(ON)

5.2

7.5

ns

Turn-ON Rise Time

tR

4.4

6.5

ns

Turn-OFF Delay Time

tD(OFF)

17.3

25

ns

Turn-OFF Fall Time

tF

VDD=15V, VGS=10V, RG=3Ω,

RL =1.8Ω

3.3

5

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

IS=1A, VGS=0V

0.76

1

V

Maximum Continuous Drain-Source Diode

Forward Current

IS

3

A

Reverse Recovery Time

tRR

IF = 8.5A, dIF /dt = 100 A/μs

16.7

21

ns

Reverse Recovery Charge

QRR

6.7

10

nC

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