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UT6302 Datasheet(PDF) 4 Page - Unisonic Technologies |
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UT6302 Datasheet(HTML) 4 Page - Unisonic Technologies |
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4 / 6 page  UT6302 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 4 of 6 www.unisonic.com.tw QW-R502-363.E TEST CIRCUITS AND WAVEFORMS (3) + - D.U.T. - (2) + (1) RG (4) + - VGS (Note 1) dv/dt controlled by RG ISD controlled by Duty Factor “D” D.U.T. – Device Under Test + - VDD Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer Circuit Layout Considerations (Note 1) (Note 2) Peak Diode Recovery dv/dt Test Circuit ISD Ripple≤5 Inductor Current VDD Body Diode Forward Drop Body Recovery dv/dt D.U.T. VDS Waveform (3) (4) Re-Applied Voltage Reverse Recovery Current (2) D.U.T. I SD Waveform di/dt Body Diode Forward Current VGS=10V (Note 3) (1) Driver Gate Drive P.W. Period D= Period P.W. Peak Diode Recovery dv/dt Waveforms Notes: 1. Reverse Polarity for P-Channel 2. Use P-Channel Driver for P-Channel Measurements 3. VGS=5.0V for Logic Level and 3V Drive Devices |
Similar Part No. - UT6302_12 |
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Similar Description - UT6302_12 |
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