UT7401

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R502-122.E

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-30

V

Gate-Source Voltage

±12

V

Continuous Drain Current (Note 2)

-1.2

A

-1.0

A

Pulsed Drain Current (Note 3)

-10

A

Power Dissipation (Note 2)

350

mW

220

mW

Junction Temperature

+150

°С

Storage Temperature

-55 ~ +150

°С

Note:1.

2.

3.

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

Pulse width ≤300us, duty cycle ≤2%.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient (Note 2)

425

°С/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNITS

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-30

V

Drain-Source Leakage Current

-1

uA

Gate-Source Leakage Current

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

-0.6

-1

-1.4

V

Drain-Source On-State Resistance (Note 1)

122

150

mΩ

147

200

mΩ

207

280

mΩ

DYNAMIC CHARACTERISTICS

Input Capacitance

f=1MHz

409

pF

Output Capacitance

55

pF

Reverse Transfer Capacitance

42

pF

SWITCHING CHARACTERISTICS

Turn-ON Delay Time (Note 1)

6.2

ns

Turn-ON Rise Time

3.2

ns

Turn-OFF Delay Time

41.2

ns

Turn-OFF Fall Time

14.5

ns

Total Gate Charge (Note 1)

5.06

nC

Gate-Source Charge

0.72

nC

Gate-Drain Charge

1.58

nC

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage(Note2)

-0.85

-1

V

Maximum Continuous Drain-Source Diode

Forward Current

-0.5

A

Notes: 1. Pulse width ≤300us, duty cycle ≤2%.

2. Surface mounted on 1 in