UT9435H

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 5

www.unisonic.com.tw

QW-R502-131.C

PARAMETER

SYMBOL

RATING

UNITS

Drain-Source Voltage

-30

V

Gate-Source Voltage

±20

V

Continuous Drain Current (Note 3)

±5.3

A

Pulsed Drain Current (Note 1, 2)

±20

A

Power Dissipation

2.5

W

Junction Temperature

+150

℃

Storage Temperature

-55 ~ +150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATING

UNIT

Junction to Ambient

50

/W

℃

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX

UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-30

V

Drain-Source Leakage Current

-1

µA

Gate-Source Leakage Current

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

-1

-3

V

Drain-Source On-State Resistance (Note 2)

44

50

mΩ

74

90

mΩ

On State Drain Current

-20

A

DYNAMIC PARAMETERS

Input Capacitance

f=1.0MHz

1040

pF

Output Capacitance

420

pF

Reverse Transfer Capacitance

150

pF

SWITCHING PARAMETERS

Turn-ON Delay Time (Note 2)

19

26

ns

Turn-ON Rise Time

9

13

ns

Turn-OFF Delay Time

74

105

ns

Turn-OFF Fall Time

36

50

ns

Total Gate Charge (Note 2)

22.5

29

nC

Gate-Source Charge

2

nC

Gate-Drain Charge

6

nC

DRAIN-SOURCE DIODE CHARACTERISTICS

Drain-Source Diode Forward Voltage(Note 2)

-0.84 -1.3

V

2. Pulse width ≤300us, duty cycle ≤2%.

3. Surface mounted on 1 in