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UTD20N03 Datasheet(PDF) 2 Page - Unisonic Technologies |
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UTD20N03 Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 3 page UTD20N03 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R502-342.A ABSOLUTE MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified)) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current (TC=25°C) ID 30 A Pulsed Drain Current (TC=25°C) IDM 120 A Single Pulsed (Note 2) EAS 15 mJ Avalanche Energy Repetitive (Note 3) EAR 6 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 6 kV/µs Power Dissipation (TC=25°C) PD 60 W Junction Temperature TJ +175 °C Storage Temperature TSTG -55 ~ +175 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. ID =15 A, VDD =25 V, RGS =25 Ω 3. Repetitive Rating: Pulse width limited by TJ 4. IS =30 A, VDS =24 V, di/dt =100A/µs,TJ(MAX) = 175 °C THERMAL DATA PARAMETER SYMBOL MIN TYP MAX UNIT Junction to Ambient θJA 100 °C/W Junction to Case θJC 1.7 2.5 °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS =0 V, ID =1 mA 30 V Drain-Source Leakage Current IDSS VDS =30 V,VGS =0 V 0.01 1 µA Gate-Source Leakage Current IGSS VGS =20 V, VDS =0 V 1 100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS =VGS, ID =25µA 1.2 1.6 2 V VGS =4.5 V, ID =15 A 22.9 31 mΩ Drain-Source On-State Resistance RDS(ON) VGS =10 V, ID =15 A 15.5 20 mΩ DYNAMIC PARAMETERS Input Capacitance CISS 530 700 pF Output Capacitance COSS 200 275 pF Reverse Transfer Capacitance CRSS VDS =25 V, VGS =0 V, f =1MHz 60 90 pF Gate Resistance RG 1.3 Ω SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) 6.2 9.3 ns Turn-ON Rise Time tR 11 17 ns Turn-OFF Delay Time tD(OFF) 23 34 ns Turn-OFF Fall-Time tF VDD =15 V, VGS =10 V, ID =15 A, RG =12.7 Ω 18 27 ns Total Gate Charge QG VDD =15 V, ID =15 A,VGS =5V 8.4 11 nC Gate Source Charge QGS 2.5 3.1 nC Gate Drain Charge QGD VDD =15 V, ID =15 A 6.4 9.6 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Inverse Diode Forward Voltage VSD IF =30 A, VGS =0 V 1.1 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 30 A Maximum Pulsed Drain-Source Diode Forward Current ISM TC =25°C 120 A Reverse Recovery Time tRR 15 18 ns Reverse Recovery Charge QRR VR =15 V,IF = IS, dI/dt =100A/µs 2 3 nC |
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