UTD20N03 datasheet(2/3 Pages) UTC

Part #	UTD20N03

Description	N-CHANNEL ENHANCEMENT MODE POWER M OSFET

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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UTD20N03

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-342.A

ABSOLUTE MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified))

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

30

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current (TC=25°C)

ID

30

A

Pulsed Drain Current (TC=25°C)

IDM

120

A

Single Pulsed (Note 2)

EAS

15

mJ

Avalanche Energy

Repetitive (Note 3)

EAR

6

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

6

kV/µs

Power Dissipation (TC=25°C)

PD

60

W

Junction Temperature

TJ

+175

°C

Storage Temperature

TSTG

-55 ~ +175

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. ID =15 A, VDD =25 V, RGS =25 Ω

3. Repetitive Rating: Pulse width limited by TJ

4. IS =30 A, VDS =24 V, di/dt =100A/µs,TJ(MAX) = 175 °C

THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction to Ambient

θJA

100

°C/W

Junction to Case

θJC

1.7

2.5

°C/W

ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS =0 V, ID =1 mA

30

V

Drain-Source Leakage Current

IDSS

VDS =30 V,VGS =0 V

0.01

1

µA

Gate-Source Leakage Current

IGSS

VGS =20 V, VDS =0 V

1

100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS =VGS, ID =25µA

1.2

1.6

2

V

VGS =4.5 V, ID =15 A

22.9

31

mΩ

Drain-Source On-State Resistance

RDS(ON)

VGS =10 V, ID =15 A

15.5

20

mΩ

DYNAMIC PARAMETERS

Input Capacitance

CISS

530

700

pF

Output Capacitance

COSS

200

275

pF

Reverse Transfer Capacitance

CRSS

VDS =25 V, VGS =0 V, f =1MHz

60

90

pF

Gate Resistance

RG

1.3

Ω

SWITCHING PARAMETERS

Turn-ON Delay Time

tD(ON)

6.2

9.3

ns

Turn-ON Rise Time

tR

11

17

ns

Turn-OFF Delay Time

tD(OFF)

23

34

ns

Turn-OFF Fall-Time

tF

VDD =15 V, VGS =10 V,

ID =15 A, RG =12.7 Ω

18

27

ns

Total Gate Charge

QG

VDD =15 V, ID =15 A,VGS =5V

8.4

11

nC

Gate Source Charge

QGS

2.5

3.1

nC

Gate Drain Charge

QGD

VDD =15 V, ID =15 A

6.4

9.6

nC

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Inverse Diode Forward Voltage

VSD

IF =30 A, VGS =0 V

1.1

1.4

V

Maximum Continuous Drain-Source Diode

Forward Current

IS

30

A

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

TC =25°C

120

A

Reverse Recovery Time

tRR

15

18

ns

Reverse Recovery Charge

QRR

VR =15 V,IF = IS, dI/dt =100A/µs

2

3

nC

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