UTD408L-TN3-R datasheet(2/5 Pages) UTC

Part #	UTD408L-TN3-R

Description	N-CHANNEL ENHANCEMENT MODE

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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UTD408

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-184.A

ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

30

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (TC=25°C)

ID

18

A

Pulsed Drain Current

IDM

40

A

Avalanche Current

IAR

18

A

Repetitive Avalanche Energy (L=0.1mH)

EAR

40

mJ

Power Dissipation (TC=25°C)

PD

60

W

Junction Temperature

TJ

+175

°C

Strong Temperature

TSTG

-55 ~ +175

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction-to-Ambient

θJA

40

50

°C/W

ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS =0 V, ID =250µA

30

V

Drain-Source Leakage Current

IDSS

VDS =24V, VGS =0 V

1

µA

Gate-Body Leakage Current

IGSS

VDS =0 V, VGS = ±20V

100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS =VGS, ID =250 µA

1

1.8

2.5

V

On State Drain Current

ID(ON)

VDS =5V, VGS =4.5V

40

A

VGS =10V, ID =18A

13.6

18

mΩ

Static Drain-Source On-Resistance

RDS(ON)

VGS =4.5V, ID =10A

20.6

27

mΩ

DYNAMIC PARAMETERS

Input Capacitance

CISS

1040 1250

Output Capacitance

COSS

180

Reverse Transfer Capacitance

CRSS

VDS =15 V, VGS =0V, f=1MHz

110

pF

SWITCHING PARAMETERS

Turn-ON Delay Time

tD(ON)

4.5

Turn-ON Rise Time

tR

3.9

Turn-OFF Delay Time

tD(OFF)

17.4

Turn-OFF Fall-Time

tF

VGS=10V,VDS=15V,RL=0.82Ω,

RGEN =3Ω

3.2

ns

Total Gate Charge

QG

19.8

25

Gate Source Charge

QGS

2.5

Gate Drain Charge

QGD

VDS =15V, VGS =10V, ID =18A

3.5

nC

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

IS=1A,VGS=0V

0.75

1

V

Maximum Continuous Drain-Source

Diode Forward Current

IS

18

A

Body Diode Reverse Recovery Time

tRR

IF=18 A, dI/dt=100A/µs

19

25

ns

Body Diode Reverse Recovery

Charge

QRR

IF=18 A, dI/dt=100A/µs

8

nC

Notes: 1. Pulse width limited by TJ(MAX)

2. Pulse width ≤300us, duty cycle ≤2%.

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