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UTD3055G-TN3-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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UTD3055G-TN3-R Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 4 page UTD3055 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R502-460.a ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Drain-Gate Voltage (RGS=1.0MΩ) VDGR 60 V Continuous VGS ±20 V Gate-Source Voltage Non-Repetitive (tP≤10µs) VGSM ±25 V Continuous @ 25°C ID 12 A Continuous @ 100°C ID 7.3 A Drain Current Single Pulse (tP≤10µs) IDM 37 A Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25°C (VDD = 25 V, VGS = 10 V, IL = 12 A, L = 1.0 mH, RG = 25 Ω ) EAS 72 mJ Total Power Dissipation @ 25°C 48 W Total Power Dissipation @ TA = 25°C, when mounted to minimum recommended pad size PD 1.75 W Operating Junction Temperature TJ -55~175 °C Storage Temperature TSTG -55~175 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 100 W/°C Junction to Case θJC 3.13 W/°C ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS ID=250µA, VGS=0V 60 V Drain-Source Breakdown Voltage BVDSS Temperature Coefficient (Positive) 65 mV/°C VDS=60V, VGS=0V 10 Drain-Source Leakage Current IDSS VDS=60V, VGS=0V, TJ=150°C 100 µA Gate- Source Leakage Current IGSS VGS=±20V, VDS=0 100 nA ON CHARACTERISTICS (Note) VDS=VGS, ID=250µA 2.0 2.7 4.0 V Gate Threshold Voltage VGS(TH) Temperature Coefficient (Negative) 5.4 mV/°C Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=6.0A 0.10 0.15 Ω ID=12A 1.3 2.2 Drain-Source On-Votlage (VGS=10V) VDS(on) ID=6.0A, TJ=150°C 1.9 V Forward Transconductance gFS VDS=7.0V, ID=6.0A 4.0 5.0 S DYNAMIC PARAMETERS Input Capacitance CISS 410 500 pF Output Capacitance COSS 130 180 pF Reverse Transfer Capacitance CRSS VGS=0V, VDS=25V, f=1.0MHz 25 50 pF Note: Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%. |
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