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UTT18P06G-TN3-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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UTT18P06G-TN3-R Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 3 page UTT18P06 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R502-713.a ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -60 V Gate-Source Voltage VGSS ±20 V Drain Current Continuous TC=25°C ID -18.3 A Pulsed IDM -73.2 A Single Pulsed Avalanche Current (L=0.1mH) IAS -18.3 A Single Pulsed Avalanche Energy (L=0.1mH) (Note 1) EAS 24.2 mJ Power Dissipation (Note 2) PD 38.5 W 2.3 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient Steady state θJA 55 °C/W Junction to Case θJC 3.25 °C/W Notes: 1. Duty cycle≤1 %. 2. See SOA curve for voltage derating. ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=-250µA, VGS=0V -60 V Drain-Source Leakage Current IDSS VDS=-60V, VGS=0V -1 µA Gate-Source Leakage Current Forward IGSS VGS=+20V, VDS=0V +100 nA Reverse VGS=-20V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=-250µA -1 -3 V Static Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-18.3A (Note 1) 0.048 0.060 Ω On State Drain Current (Note 1) ID(ON) VGS=-10V, VDS=-5V -30 A DYNAMIC PARAMETERS (Note 2) Input Capacitance CISS VGS=0V, VDS=-25V, f=1.0MHz (Note 2) 1140 1710 pF Output Capacitance COSS 130 pF Reverse Transfer Capacitance CRSS 90 pF |
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