UTT25P10

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-597.b

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage (Note 2)

-100

V

-100

V

Gate-Source Voltage

±20

V

Drain Current

Continuous

-25

A

Pulsed (Note 3)

-60

A

Linear Derating Factor

1.2

W/°C

Power Dissipation

TO-220

150

W

TO-252

50

Junction Temperature

-55~+150

°C

Storage Temperature

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

3. Repetitive rating: pulse width limited by maximum junction temperature.

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Case

TO-220

0.83

°C/W

TO-252

2.5

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-100

V

Drain-Source Leakage Current

-1

µA

-25

Gate- Source Leakage Current

Forward

+100

nA

Reverse

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

-2

-4

V

Drain to Source On Voltage (Note 1)

-3.75

V

Static Drain-Source On-State Resistance (Note 2)

0.150

Ω

DYNAMIC PARAMETERS

Input Capacitance

f=1MHz

3000

pF

Output Capacitance

1500

pF

Reverse Transfer Capacitance

600

pF

SWITCHING PARAMETERS

Turn-ON Delay Time

35

50

ns

Rise Time

165

250

ns

Turn-OFF Delay Time

270

400

ns

Fall-Time

165

250

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage (Note 1)

-1.4

V

Note:

1. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.