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UTT30N08G-TN3-T Datasheet(PDF) 3 Page - Unisonic Technologies |
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UTT30N08G-TN3-T Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 6 page UTT30N08 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-732.a ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SWITCHING PARAMETERS Total Gate Charge QG VDS=60V, VGS=10V, ID=30A (Note 1, 2) 48 60 nC Gate to Source Charge QGS 15 nC Gate to Drain ("Miller") Charge QGD 20 nC Turn-ON Delay Time tD(ON) VDD=30V, ID=15A, RG=4.7Ω (Note 1, 2) 45 ns Rise Time tR 60 ns Turn-OFF Delay Time tD(OFF) 115 ns Fall-Time tF 66 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 30 A Maximum Body-Diode Pulsed Current ISM 120 A Drain-Source Diode Forward Voltage VSD ISD=30A, VGS=0V 1.4 V Notes: 1. Pulse Test: Pulse width≤300µs; Duty Cycle≤2%. 2. Essentially Independent of Operating Temperature Typical Characteristics |
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