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UTT30N10L-TN3-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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UTT30N10L-TN3-R Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 5 page UTT30N10 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 5 www.unisonic.com.tw QW-R502-661.c ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current Continuous (VGS=10V) TC=25°C ID 30 A Pulsed IDM 120 A Single Pulsed Avalanche Energy (Note 2) EAS 55 mJ Power Dissipation TO-220 PD 79 W TO-252 44 Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Starting TJ = 25°C, L = 0.27mH, IAS = 30A. 3. Pulse Width = 100s THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient TO-220 θJA 62 °C/W TO-252 110 Junction to Case TO-220 θJC 1.58 °C/W TO-252 2.85 ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 100 V Drain-Source Leakage Current IDSS VDS=100V, VGS=0V 1 µA Gate- Source Leakage Current Forward IGSS VGS=+20V, VDS=0V +100 nA Reverse VGS=-20V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 1 3 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=30A 32 43 mΩ VGS=6V, ID=15A 40 72 mΩ DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz 1250 pF Output Capacitance COSS 190 pF Reverse Transfer Capacitance CRSS 45 pF SWITCHING PARAMETERS Total Gate Charge at 10V QG VGS=0~10V,VDD=50V,ID=30A,IG=1.0mA 18.5 28 nC Gate to Source Charge QGS VDD=50V, ID=30A, IG=1.0mA 6.5 nC Gate to Drain Charge QGD 4.6 nC Turn-ON Time tON VDD=50V, ID=30A, VGS=10V, RGS=16Ω 83 ns Turn-ON Delay Time tD(ON) 9 ns Rise Time tR 46 ns Turn-OFF Delay Time tD(OFF) 26 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD ISD=30A 1.25 V ISD=15A 1.0 V |
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