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UTT30P06L-TA3-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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UTT30P06L-TA3-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 3 page UTT30P06 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R502-622.a ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -60 V Drain-Gate Voltage (RGS=1.0 MΩ) VDGR -60 V Continuous VGSS ±15 V Gate-Source Voltage Non−repetitive (tp≤10ms) VGSM ±25 V TC=25°C ID -30 A Continuous TC=100°C ID -19 A Drain Current Pulsed (tp≤10μs) IDM -105 A Power Dissipation 125 W Derate Above 25°C PD 0.83 W/°C Junction Temperature TJ +175 °C Storage Temperature TSTG -55~+175 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. When surface mounted to an FR4 board using the minimum recommended pad size. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case θJC 1.2 °C/W |
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