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UTT60N05L-TA3-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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UTT60N05L-TA3-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 3 page UTT60N05 Preliminary Power MOSFE UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R502-662.a ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 50 V Gate-Source Voltage VGSS ±20 V Continuous ID 60 A Drain Current Pulsed IDM 120 A Single Pulsed EAS 600 mJ Avalanche Energy Repetitive EAR 150 mJ Power Dissipation PD 125 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case θJC 1 °C/W ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 50 V Drain-Source Leakage Current IDSS VDS=50V, VGS=0V 1 µA Forward VGS=+20V, VDS=0V +100 nA Gate- Source Leakage Current Reverse IGSS VGS=-20V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2 4 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=20A 14 18 mΩ DYNAMIC PARAMETERS Input Capacitance CISS 2000 pF Output Capacitance COSS 400 pF Reverse Transfer Capacitance CRSS VGS=0V, VDS=25V, f=1.0MHz 115 pF SWITCHING PARAMETERS Total Gate Charge QG 39 60 nC Gate to Source Charge QGS 12 nC Gate to Drain Charge QGD VGS=10V, VDS=30V, ID=60A, IG=3.33mA 10 nC Turn-ON Delay Time tD(ON) 12 30 ns Rise Time tR 11 30 ns Turn-OFF Delay Time tD(OFF) 25 50 ns Fall-Time tF VDD=30V, ID=15A, RG=4.7Ω, VGS=10V 15 30 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 60 A Maximum Body-Diode Pulsed Current ISM 120 A Drain-Source Diode Forward Voltage VSD IS=60A, VGS=0V 1.6 V |
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