UTT60N05

Preliminary

Power MOSFE

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-662.a

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

50

V

Gate-Source Voltage

±20

V

Continuous

60

A

Drain Current

Pulsed

120

A

Single Pulsed

600

mJ

Avalanche Energy

Repetitive

150

mJ

Power Dissipation

125

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

62.5

°C/W

Junction to Case

1

°C/W

ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

50

V

Drain-Source Leakage Current

1

µA

Forward

+100 nA

Gate- Source Leakage Current

Reverse

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

2

4

V

Static Drain-Source On-State Resistance

14

18

mΩ

DYNAMIC PARAMETERS

Input Capacitance

2000

pF

Output Capacitance

400

pF

Reverse Transfer Capacitance

115

pF

SWITCHING PARAMETERS

Total Gate Charge

39

60

nC

Gate to Source Charge

12

nC

Gate to Drain Charge

10

nC

Turn-ON Delay Time

12

30

ns

Rise Time

11

30

ns

Turn-OFF Delay Time

25

50

ns

Fall-Time

15

30

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

60

A

Maximum Body-Diode Pulsed Current

120

A

Drain-Source Diode Forward Voltage

1.6

V