UTT60N10

Preliminary

Power MOSFE

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-664.a

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

100

V

Gate-Source Voltage

±25

V

Continuous

60

A

Drain Current

Pulsed

100

A

Avalanche Energy

Single Pulsed

560

mJ

Power Dissipation

100

W

Junction Temperature

150

°C

Storage Temperature

-55 ~ 150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

62.5

°C/W

Junction to Case

1.25

°C/W

ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

100

V

Drain-Source Leakage Current

1

µA

Forward

+100 nA

Gate- Source Leakage Current

Reverse

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

2

4

V

Static Drain-Source On-State Resistance

18

24

mΩ

DYNAMIC PARAMETERS

Input Capacitance

1450 1900 pF

Output Capacitance

520 680

pF

Reverse Transfer Capacitance

120 155

pF

SWITCHING PARAMETERS

Total Gate Charge

50

65

nC

Gate to Source Charge

9.3

nC

Gate to Drain Charge

25

nC

Turn-ON Delay Time

16.5

45

ns

Rise Time

200 410

ns

Turn-OFF Delay Time

70

150

ns

Fall-Time

95

200

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

60

A

Maximum Body-Diode Pulsed Current

100

A

Drain-Source Diode Forward Voltage

1.5

V