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CPC5603 Datasheet(PDF) 1 Page - Clare, Inc. |
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CPC5603 Datasheet(HTML) 1 Page - Clare, Inc. |
1 / 5 page www.clare.com DS-CPC5603-R05 1 CPC5603 N-Channel Depletion Mode FET RoHS 2002/95/EC e3 Pb www.clare.com Applications Features Description Ordering Information Package Pinout Pin Number Name 1GATE 2 DRAIN 3 SOURCE 4 DRAIN • Support Component for LITELINK™ Data Access Arrangement (DAA) • Telecom • Normally-On Switches • Ignition Modules • Converters • Security • Power Supplies • 415V Drain-to-Source Voltage • Depletion Mode Device Offers Low R DS(on) at Cold Temperatures • Low On-Resistance: 8 (Typical) @ 25°C • Low V GS(off) Voltage: -2.0V to -3.6V • High Input Impedance • Low Input and Output Leakage • Small Package Size SOT-223 • PC Card (PCMCIA) Compatible • PCB Space and Cost Savings The CPC5603 is an N-channel, depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third-generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a highly reliable device particularly in difficult application environments such as telecommunications, security, and power supplies. One of the primary applications for the CPC5603 is as a linear regulator/hook switch for the LITELINK™ family of Data Access Arrangements (DAA) Devices CPC5620A, CPC5621A, and CPC5622A. The CPC5603 has a typical on-resistance of 8 , a drain-to-source voltage of 415V and is available in the SOT-223 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown. D G D S 4 1 2 3 Parameter Rating Units Drain-to-Source Voltage - V DS 415 V Max On-Resistance - R DS(on) 14 Max Power 2.5 W Part Number Description CPC5603C N-Channel Depletion Mode FET, SOT-223 Pkg. Cut-Tape, Available in Quantities of 200, 300, 400, 500, and 600 CPC5603CTR N-Channel Depletion Mode FET, SOT-223 Pkg. Tape and Reel (1000/reel) |
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