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EL825(S)(TB)-V Datasheet(PDF) 3 Page - Everlight Electronics Co., Ltd |
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EL825(S)(TB)-V Datasheet(HTML) 3 Page - Everlight Electronics Co., Ltd |
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3 / 12 page (TB)-V/1491/3/EL825(S)(TB)-V.png) 4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER Everlight Electronics Co., Ltd. 3 http://www.everlight.com Document No：DPC-0000025 Rev. 2 December 28, 2009 EL825 Series Electrical Characteristics (Ta=25°C unless specified otherwise) Input Parameter Symbol Min. Typ.* Max. Unit Condition Forward voltage VF - 1.2 1.4 V IF = 20mA Reverse current IR - - 10 µA VR = 4V Input capacitance Cin - 30 250 pF V = 0, f = 1kHz Output Parameter Symbol Min. Typ.* Max. Unit Condition Collector-Emitter dark current ICEO - - 1 µA VCE = 10V, IF = 0mA Collector-Emitter breakdown voltage BVCEO 40 - - V IC = 0.1mA Emitter-Collector breakdown voltage BVECO 7 - - V IE = 0.01mA Transfer Characteristics (Ta=25°C unless specified otherwise) Parameter Symbol Min. Typ.* Max. Unit Condition Current Transfer ratio CTR 600 - 7500 % IF = 1mA ,VCE = 2V Collector-Emitter saturation voltage VCE(sat) - 0.8 1.0 V IF = 20mA ,IC = 5mA Isolation resistance RIO 5×10 10 - - Ω VIO = 500Vdc, 40~60% R.H. Floating capacitance CIO - 0.6 1.0 pF VIO = 0, f = 1MHz Cut-off frequency fc - 6 - kHz VCE = 5V, IC = 2mA RL = 100Ω, -3dB Rise time tr - 60 300 µs Fall time tf - 53 250 µs VCE = 2V, IC = 10mA, RL = 100Ω * Typical values at Ta = 25°C |
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