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EL817(S)(C)(TA)-FVG Datasheet(PDF) 3 Page - Everlight Electronics Co., Ltd |
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EL817(S)(C)(TA)-FVG Datasheet(HTML) 3 Page - Everlight Electronics Co., Ltd |
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3 / 14 page (C)(TA)-FVG/1506/3/EL817(S)(C)(TA)-FVG.png) LifecyclePhase: Revision : 4 Expired Period: Forever Release Date:2011-02-18 08:59:58.0 4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER Everlight Electronics Co., Ltd. 3 http://www.everlight.com Document No：DPC-0000011 Rev.4 July 30, 2010 EL817-G Series Electrical Characteristics (Ta=25°C unless specified otherwise) Input Parameter Symbol Min. Typ.* Max. Unit Condition Forward voltage VF - 1.2 1.4 V IF = 20mA Reverse current IR - - 10 µA VR = 4V Input capacitance Cin - 30 250 pF V = 0, f = 1kHz Output Parameter Symbol Min. Typ.* Max. Unit Condition Collector-Emitter dark current ICEO - - 100 nA VCE = 20V, IF = 0mA Collector-Emitter breakdown voltage BVCEO 80 - - V IC = 0.1mA Emitter-Collector breakdown voltage BVECO 7 - - V IE = 0.1mA Transfer Characteristics (Ta=25°C unless specified otherwise) Parameter Symbol Min. Typ.* Max. Unit Condition EL817 50 - 600 EL817A 80 - 160 EL817B 130 - 260 EL817C 200 - 400 EL817D 300 - 600 EL817X 100 - 200 Current Transfer ratio EL817Y CTR 150 - 300 % IF = 5mA ,VCE = 5V Collector-Emitter saturation voltage VCE(sat) - 0.1 0.2 V IF = 20mA ,IC = 1mA Isolation resistance RIO 5×10 10 - - VIO = 500Vdc, 40~60% R.H. Floating capacitance CIO - 0.6 1.0 pF VIO = 0, f = 1MHz Cut-off frequency fc - 80 - kHz VCE = 5V, IC = 2mA RL = 100, -3dB Rise time tr - 6 18 µs Fall time tf - 8 18 µs VCE = 2V, IC = 2mA, RL = 100 * Typical values at Ta = 25°C |
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