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EL851S1(TD)-V Datasheet(PDF) 3 Page - Everlight Electronics Co., Ltd |
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EL851S1(TD)-V Datasheet(HTML) 3 Page - Everlight Electronics Co., Ltd |
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3 / 13 page -V/1488/3/EL851S1(TD)-V.png) 4 PIN DIP HIGH VOLTAGE PHOTOTRANSISTOR PHOTOCOUPLER Everlight Electronics Co., Ltd. 3 http://www.everlight.com Document No ：DPC-0000082 Rev.2 November 18, 2011 EL851 series Electrical Characteristics (Ta=25°C unless specified otherwise) Input Parameter Symbol Min. Typ.* Max. Unit Condition Forward voltage VF - 1.2 1.4 V IF = 10mA Reverse current IR - - 10 µA VR = 5V Input capacitance Cin - 30 - pF V = 0, f = 1MHz Output Parameter Symbol Min. Typ.* Max. Unit Condition Collector-Emitter dark current ICEO - - 100 nA VCE = 200V Collector-Emitter breakdown voltage BVCEO 350 - - V IC = 0.1mA Emitter-Collector breakdown voltage BVECO 7 - - V IE = 0.1mA Collector-Emitter capacitance CCE - 10 - pF VCE = 0V, f = 1MHz Transfer Characteristics Parameter Symbol Min. Typ.* Max. Unit Condition Current Transfer Ratio CTR 50 - 600 % IF = 5mA ,VCE = 5V Collector-emitter saturation voltage VCE(sat) - - 0.4 V IF = 20mA , IC = 1mA Isolation resistance RIO 10 11 - - Ω VIO = 500Vdc Input-output capacitance CIO - 0.6 - pF VIO = 0, f = 1MHz Rise time tr - 4 18 µs VCE = 2V, IC = 2mA, RL = 100Ω Fall time tf - 5 18 * Typical values at Ta = 25°C |
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