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MCM6726DWJ12 Datasheet(PDF) 2 Page - Motorola, Inc |
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MCM6726DWJ12 Datasheet(HTML) 2 Page - Motorola, Inc |
2 / 7 page MCM6726D 2 MOTOROLA FAST SRAM TRUTH TABLE (X = Don’t Care) E G W Mode VCC Current Output Cycle H X X Not Selected ISB1, ISB2 High–Z — L H H Output Disabled ICCA High–Z — L L H Read ICCA Dout Read Cycle L X L Write ICCA High–Z Write Cycle ABSOLUTE MAXIMUM RATINGS (See Note) Rating Symbol Value Unit Power Supply Voltage VCC – 0.5 to + 7.0 V Voltage Relative to VSS for Any Pin Except VCC Vin, Vout – 0.5 to VCC + 0.5 V Output Current Iout ± 30 mA Power Dissipation PD 1.2 W Temperature Under Bias Tbias – 10 to + 85 °C Operating Temperature TA 0 to + 70 °C Storage Temperature — Plastic Tstg – 55 to + 125 °C NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to RECOMMENDED OPER- ATING CONDITIONS. Exposure to higher than recommended voltages for extended periods of time could affect device reliability. DC OPERATING CONDITIONS AND CHARACTERISTICS (VCC = 5.0 V ± 10%, TA = 0 to 70°C, Unless Otherwise Noted) RECOMMENDED OPERATING CONDITIONS Parameter Symbol Min Typ Max Unit Supply Voltage (Operating Voltage Range) VCC 4.5 5.0 5.5 V Input High Voltage VIH 2.2 — VCC + 0.3** V Input Low Voltage VIL – 0.5 * — 0.8 V *VIL (min) = –0.5 V dc; VIL (min) = –2.0 V ac (pulse width ≤ 2.0 ns) for I ≤ 20.0 mA. ** VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2 V ac (pulse width ≤ 2.0 ns) for I ≤ 20.0 mA. DC CHARACTERISTICS Parameter Symbol Min Max Unit Input Leakage Current (All Inputs, Vin = 0 to VCC) Ilkg(I) — ± 1.0 µA Output Leakage Current (E = VIH, Vout = 0 to VCC) Ilkg(O) — ± 1.0 µA Output Low Voltage (IOL = + 8.0 mA) VOL — 0.4 V Output High Voltage (IOH = – 4.0 mA) VOH 2.4 — V POWER SUPPLY CURRENTS Parameter Symbol 6726D–8 6726D–10 6726D–12 Unit Notes AC Active Supply Current (Iout = 0 mA) (VCC = max, f = fmax) ICCA 195 175 165 mA 1, 2, 3 Active Quiescent Current (E = VIL, VCC = max, f = 0 MHz) ICC2 100 100 100 mA AC Standby Current (E = VIH, VCC = max, f = fmax) ISB1 60 60 60 mA 1, 2, 3 CMOS Standby Current (VCC = max, f = 0 MHz, E ≥ VCC – 0.2 V, Vin ≤ VSS + 0.2 V, or ≥ VCC – 0.2 V) ISB2 20 20 20 mA NOTES: 1. Reference AC Operating Conditions and Characteristics for input and timing (VIH/VIL, tr/tf, pulse level 0 to 3.0 V, VIH = 3.0 V). 2. All addresses transition simultaneously low (LSB) and then high (MSB). 3. Data states are all zero. This device contains circuitry to protect the inputs against damage due to high static volt- ages or electric fields; however, it is advised that normal precautions be taken to avoid appli- cation of any voltage higher than maximum rated voltages to these high–impedance cir- cuits. This BiCMOS memory circuit has been de- signed to meet the dc and ac specifications shown in the tables, after thermal equilibrium has been established. The circuit is in a test socket or mounted on a printed circuit board and transverse air flow of at least 500 linear feet per minute is maintained. |
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