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HER108GT-G Datasheet(PDF) 1 Page - Comchip Technology |
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HER108GT-G Datasheet(HTML) 1 Page - Comchip Technology |
1 / 4 page Parameter Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current @TA=25°C Maximum instantaneous forward voltage at current specified Maximum reverse current DC Operating temperature range Storage temperature range Maximum reverse recovery time (Note 1) 50 35 50 VRRM VRMS VDC I(AV) VF IR trr TJ TSTG 1.0 5.0 -55 ~ +150 -55 ~ +150 V V V A ns °C °C Maximum repetitive peak reverse voltage @IT = 5μA NOTES: 1. R test conditions: IF=0.5A, IR=1.0A, IRR=0.25A(RGI circuit) everse recovery Dimensions in inches and (millimeter) DO-41 Features -Glass passivated chip. -High speed switching. -Low forward voltage. Mechanical data -Case: JEDEC DO-41 molded plastic. -Polarity: Color band denotes cathode end. -Lead: Solderable per MIL-STD-202, method 208 guaranteed. -Mounting position: Any -Weight: 0.321 grams 100 70 100 200 140 200 400 280 400 600 420 600 800 560 800 HER101G-G Thru. HER108G-G Page 1 QW-BU010 High Efficiency Rectifiers REV:A Comchip Technology CO., LTD. 0.205(5.21) 1.000(25.40) Min. 0.117(2.97) DIA. 0.033(0.84) DIA. 0.028(0.71) DIA. 0.090(2.29) DIA. 0.165(4.19) 1.000(25.40) Min. 1.0 1.7 50 75 -Epoxy: UL retardant. 94V-0 rate flame 1000 700 1000 300 210 300 1.3 μA V -High reliability. -High surge current capability. Symbol Unit HER 101G-G HER 102G-G HER 103G-G HER 104G-G HER 105G-G HER 106G-G HER 107G-G HER 108G-G Maximum Ratings and Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Voltage: 50 to 1000 V Current: 1.0 A RoHS Device |
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Similar Description - HER108GT-G |
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