MOS IC

Nonvolatile Memory

with Extended Temperature Range

SDE 2526

Semiconductor Group

82

01.96

P-DIP-8-4

P-DSO-8-1

Circuit Description

I

It consists of a serial data line SDA and a serial clock line SCL. The data line requires an external

pull-up resistor to

lines SDA and SCL are high, i.e. the output stage of the data line is disabled. As long a SCL remains

"1", information changes on the data bus indicate the start or the end of data transfer between two

components.

Type

Ordering Code

Package

Pin Configuration

SDE 2526-5

Q67100-H9020

P-DIP-8-4

SIEMENS

SDE 2526-5 A2G

Q67100-H9036

P-DSO-8-1 (SMD)

SIEMENS

SDE 25X26 A2

Q67100-H3261

P-DIP-8-4

STANDARD

SDE 25X26-5 A2G

Q67100-H3262

P-DSO-8-1 (SMD)

STANDARD

Features

q Word-organized reprogrammable nonvolatile memory

in n-channel floating-gate technology (E

2

PROM)

q 256

q + 5 V supply voltage

q Serial 2-line bus for data input and output (I2C Bus)

q Reprogramming mode, typ. 15 ms erase/write cycle

q Reprogramming by means of on-chip control

(without external control)

q Data retention longer than 10 years

q More than 10

5

reprogramming cycles per address

q Extended temperature range from – 40 to 110

°C