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TB2S Datasheet(PDF) 1 Page - Comchip Technology

Part # TB2S
Description  Silicon Bridge Rectifiers
Download  4 Pages
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Manufacturer  COMCHIP [Comchip Technology]
Direct Link  http://www.comchiptech.com
Logo COMCHIP - Comchip Technology

TB2S Datasheet(HTML) 1 Page - Comchip Technology

  TB2S Datasheet HTML 1Page - Comchip Technology TB2S Datasheet HTML 2Page - Comchip Technology TB2S Datasheet HTML 3Page - Comchip Technology TB2S Datasheet HTML 4Page - Comchip Technology  
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Reverse Voltage: 200 to 1000 Volts
Forward Current: 0.8,1.0 A
RoHS Device
Page 1
REV:A
Features
-Glass passivated chip junction.
-Plastic materrial has U/L flammability classification 94v-0.
-Save space on printed circuit boards.
-Pb free product.
Mechanical data
-Polarity: Symbol molded on body.
-Case: Molded plastic body over passivated junction.
TB2S-G Thru. TB10S-G
Parameter
Dimensions in inches and (millimeter)
TBS
QW-BBR53
Symbol
Unit
TB4S-G
TB6S-G
TB8S-G
TB10S-G
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Output Current
TL=100°C
Peak Forward Surge Current, 8.3ms Single
Half Sine-wave, Superimposed on Rated Load
(JEDEC Method)
Maximum Reverse Current @TA=25°C
at Rated DC Blocking Voltage
Operating Junction Temperature Range
Storage Temperature Range
Notes: 1. On glass epoxy P.C.B
2. On aluminum substrate
VRRM
VRMS
VDC
I (AV)
F
IFSM
VF
IR
RθJL
TJ
TSTG
400
280
400
600
420
600
800
560
800
1000
700
1000
V
V
V
30
0.95
10
-55 to +150
-55 to +150
A
A
V
μA
°C/W
°C
°C
0.028 (0.70)
0.024 (0.60)
0.012 (0.30)
0.008 (0.20)
0.264 (6.70)
Comchip Technology CO., LTD.
TB2S-G
200
140
200
Marking
TB4S
TB6S
TB8S
TB10S
TB2S
0.060 (1.45)
0.051 (1.15)
0.205 (5.20)
0.189 (4.80)
0.249 (6.30)
0.179 (4.55)
0.167 (4.25)
0.028 (0.70)
0.024 (0.60)
0.161 (4.10)
0.154 (3.90)
+
-
0.006 (0.15)
0.002 (0.05)
-High temperature soldering guaranteed:
-High surge overload rating :30A peak
260°C/10 seconds at 5 ibs.
-Terminals: Plated leads solderable per MIL-STD-750,
-Mounting position: Any.
Method 2026.
1.0
2)
0.8
1)
RθJA
25
62.5
80
Typical Thermal Junction to lead
On aluminum substrate
On glass-epoxy substrate
Maximum Instantaneous Forward Voltage
at 0.4A DC
Maximum ratings and electrical characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Silicon Bridge Rectifiers


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