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SFH309F-4 Datasheet(PDF) 3 Page - Siemens Semiconductor Group |
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SFH309F-4 Datasheet(HTML) 3 Page - Siemens Semiconductor Group |
3 / 6 page Semiconductor Group 3 SFH 309 SFH 309 FA Verlustleistung, T A = 25 °C Total power dissipation P tot 165 mW Wärmewiderstand Thermal resistance R thJA 450 K/W Kennwerte ( T A = 25 °C, λ = 950 nm) Characteristics Bezeichnung Description Symbol Symbol Wert Value Einheit Unit SFH 309 SFH 309 FA Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity λ S max 860 900 nm Spektraler Bereich der Fotoempfindlichkeit S = 10 % von S max Spectral range of sensitivity S = 10 % of S max λ 380 ... 1150 730 ... 1120 nm Bestrahlungsempfindliche Fläche ( ∅ 240 µm) Radiant sensitive area A 0.2 0.2 mm2 Abmessung der Chipfläche Dimensions of chip area L × B L × W 0.45 × 0.45 0.45 × 0.45 mm × mm Abstand Chipoberfläche zu Gehäuseober- fläche Distance chip front to case surface H 2.4 ... 2.8 2.4 ... 2.8 mm Halbwinkel Half angle ϕ± 12 ± 12 Grad deg. Kapazität, V CE = 0 V, f = 1 MHz, E = 0 Capacitance C CE 5.0 5.0 pF Dunkelstrom Dark current V CE = 25 V, E = 0 I CEO 1 ( ≤ 200) 1 ( ≤ 200) nA Grenzwerte Maximum Ratings (cont’d) Bezeichnung Description Symbol Symbol Wert Value Einheit Unit |
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