BC846BLP4 datasheet(3/6 Pages) DIODES

Part #	BC846BLP4

Description	65V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Download	6 Pages

Scroll/Zoom	100%

Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

Logo

3 / 6 page

BC846BLP4

Document number: DS35751 Rev. 1 - 2

3 of 6

www.diodes.com

February 2012

BC846BLP4

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

BVCBO

80

⎯

V

IC = 100μA, IE = 0

Collector-Emitter Breakdown Voltage (Note 5)

BVCEO

65

⎯

V

IC = 10mA, IB = 0

Emitter-Base Breakdown Voltage

BVEBO

6

⎯

V

IE = 100μA, IC = 0

Collector Cutoff Current

ICES

⎯

15

nA

VCE = 65V

Collector Cutoff Current

ICBO

⎯

15

5.0

nA

µA

VCB = 40V

VCB = 30V, TA = 150°C

ON CHARACTERISTICS (Note 5)

DC Current Gain

hFE

200

290

450

⎯

VCE = 5V, IC = 2.0mA

Collector-Emitter Saturation Voltage

VCE(sat)

⎯

90

200

250

600

mV

IC = 10mA, IB = 0.5mA

IC = 100mA, IB = 5.0mA

Base-Emitter Saturation Voltage

VBE(sat)

⎯

700

900

⎯

mV

IC = 10mA, IB = 0.5mA

IC = 100mA, IB = 5.0mA

Base-Emitter Voltage

VBE(on)

580

⎯

660

⎯

700

770

mV

VCE = 5V, IC = 2.0mA

VCE = 5V, IC = 10mA

SMALL SIGNAL CHARACTERISTICS (Note 5)

Input Capacitance

Cibo

⎯

6.7

⎯

pF

VCB = 5V, f = 1.0MHz

Output Capacitance

Cobo

⎯

1.76

⎯

pF

VCB = 10V, f = 1.0MHz

Current Gain-Bandwidth Product

fT

100

300

⎯

MHz

VCE = 5V, IC = 10mA, f = 100MHz

Noise Figure

NF

⎯

2

10

dB

VCE = 5V, IC = 200µA, RS = 2.0kΩ,

f = 1.0kHz,

Δf = 200Hz

Delay time

td

-

11.2

-

ns

VCC = 30V,

IC = 150mA,

IB1 = IB2 = 15mA

Rise time

tr

-

59.7

-

ns

Storage time

ts

-

190.8

-

ns

Fall time

tf

-

108.6

-

ns

Notes:

5. Measured under pulsed conditions. Pulse width = 300

μs. Duty cycle ≤2%.

Typical Electrical Characteristics

10

0.01

0.1

1

10

100

1,000

100

1,000

I , COLLECTOR CURRENT (mA)

Fig.

Typical DC Current Gain vs. Collector Current

C

3

T = 25°C

A

T =

5°C

A

-5

T = 5°C

A

8

T = 1 5°C

A

2

T =

°C

A

150

0

0.1

0.2

0.3

0.4

0.5

0.6

0

10

20

304050

60

I , BASE CURRENT (mA)

Fig. 4 Typical Collector-Emitter Saturation Voltage

vs.

Current

B

Base

I = 0.1mA

B

I = 0.2mA

B

I = 0.5mA

B

I = 1mA

B

I = 2mA

B

I = 5mA

B

I = 10mA

B

I = 30mA

B

I = 50mA

B

Similar Part No. - BC846BLP4

Manufacturer	Part #	Datasheet	Description
Diodes Incorporated	BC846BLP4	407Kb / 7P	65V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
	BC846BLP4-7B	407Kb / 7P	65V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
	BC846BLP4	151Kb / 7P	65V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
	BC846BLP4	407Kb / 7P	65V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

More results

Similar Description - BC846BLP4

Manufacturer	Part #	Datasheet	Description
Diodes Incorporated	BC846BLP4	151Kb / 7P	65V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
	BC846BLP4	407Kb / 7P	65V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
	BC846AS	638Kb / 7P	65V DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
	BC846ASQ	548Kb / 7P	65V DUAL NPN SMALL SIGNAL TRANSISTOR
	BC856ASQ	485Kb / 6P	65V DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
	BC856AS	542Kb / 6P	65V DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
	MMBT3904	55Kb / 3P	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR DS30036 Rev. 11 - 2
	MMBT4124	42Kb / 2P	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR DS30105 Rev. 5 - 2
	MMBT5551	419Kb / 4P	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR DS30061 Rev. 9 - 2
	MMST3904	441Kb / 4P	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR DS30082 Rev. 10 - 2

More results

BC846BLP4 Datasheet(PDF) 3 Page - Diodes Incorporated

BC846BLP4 Datasheet(HTML) 3 Page - Diodes Incorporated

Similar Part No. - BC846BLP4

Similar Description - BC846BLP4

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL