Q62703-Q1095 datasheet(2/5 Pages) SIEMENS

Part #	Q62703-Q1095

Description	GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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2 / 5 page

SFH 487

Semiconductor Group

2

1997-11-01

Grenzwerte (

T

A = 25 °C)

Maximum Ratings

Bezeichnung

Description

Symbol

Wert

Value

Einheit

Unit

Betriebs- und Lagertemperatur

Operating and storage temperature range

T

op; Tstg

– 55 ... + 100

°C

Sperrschichttemperatur

Junction temperature

T

j

100

°C

Sperrspannung

Reverse voltage

V

R

5V

Durchla

βstrom

Forward current

I

F

100

mA

Sto

βstrom, τ≤ 10 µs

Surge current

I

FSM

2.5

A

Verlustleistung

Power dissipation

P

tot

200

mW

Wärmewiderstand, freie Beinchenlänge

max. 10 mm

Thermal resistance, lead length between

package bottom and PC-board max. 10 mm

R

thJA

375

K/W

Kennwerte (

T

A = 25 °C)

Characteristics

Bezeichnung

Description

Symbol

Wert

Value

Einheit

Unit

Wellenlänge der Strahlung

Wavelength at peak emission

I

F = 100 mA

λ

peak

880

nm

Spektrale Bandbreite bei 50 % von

I

max,

I

F = 100 mA

Spectral bandwidth at 50 % of

I

max

∆λ

80

nm

Abstrahlwinkel

Half angle

ϕ± 20

Grad

deg.

Aktive Chipfläche

Active chip area

A

0.16

mm2

Abmessungen der aktiven Chipfläche

Dimension of the active chip area

L

× B

L

× W

0.4

× 0.4

mm

Abstand Chipoberfläche bis Linsenscheitel

Distance chip front to lens top

H

2.6

mm

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Similar Description - Q62703-Q1095

Manufacturer	Part #	Datasheet	Description
Siemens Semiconductor G...	SFH487P	38Kb / 5P	GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter 880 nm
Siemens Semiconductor G...	SFH486	38Kb / 4P	GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter 880 nm
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Q62703-Q1095 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Q62703-Q1095 Datasheet(HTML) 2 Page - Siemens Semiconductor Group

Similar Part No. - Q62703-Q1095

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