12T08AI-B datasheet(5/6 Pages) NELLSEMI

Part #	12T08AI-B

Description	TRIACs, 12A Snubberless, Logic Level and Standard

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Manufacturer	NELLSEMI [Nell Semiconductor Co., Ltd]

Direct Link	http://www.nellsemi.com

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SEMICONDUCTOR

RoHS

10

100

1000

-40

-20

0

20

40

60

80

100

120

140

0.0

0.5

1.0

1.5

2.0

2.5

IGT

I & I

H

L

T (°C)

j

Fig.9 Relative variation of critical rate of decrease

of main current versus (dV/dt)c (typical values).

Fig.10 Relative variation of critical rate of

of main current versus (dV/dt)c

decrease

(typical values).

Fig.7 Non-repetitive surge peak on-state current

for a sinusoidal pulse with width tp < 10ms.

2

and corresponding value of l t.

Fig.8 Relative variation of gate trigger current,holding

current and latching current versus junction

temperature (typical values).

2

l

(A), l t(A s)

TSM

l

,

l ,l [T ] / l

,l ,l [T =25°C]

GT H L

j

GT H L

j

0.0

0.4

0.8

1.2

1.6

2.4

2.0

2.8

(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c

0.1

1.0

10.0

100.0

0.1

1.0

10.0

100.0

12T Series

dI/dt limitation:

50A/µs

T initial=25°C

j

2

I t

ITSM

t (ms)

p

0.01

0.10

1.00

10.00

SW

CW/BW

C

B

(dV/dt)c (V/µs)

TW

4.5

5.0

(dV/dt)c (V/µs)

Fig.11 Relative variation of critical rate of decrease

of main current versus junction temperature

0

1

2

3

4

6

5

(dI/dt)c [T ] (dl/dt)c [

j

T specified ]

j

0

10

20

30

40

50

60

70

80

0

4

8

12

20

16

T (°C)

j

0

25

50

75

100

125

2

Fig.12 D PAK thermal resistance junction to

ambient versus copper surface under

tab (printed circuit board FR4, copper

thickness: 35µm)

Rth(j-a)(°C/W)

2

D PAK

2

S(cm )

24

32

28

36

40

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12T08AI-B Datasheet(PDF) 5 Page - Nell Semiconductor Co., Ltd

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