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10T08AIBW Datasheet(PDF) 4 Page - Nell Semiconductor Co., Ltd |
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10T08AIBW Datasheet(HTML) 4 Page - Nell Semiconductor Co., Ltd |
4 / 6 page 0 1 2 3 4 5 6 7 8 P(W) 0 25 50 75 100 125 I (A) T(RMS) 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 1E-2 1E-1 1E+0 K=[Z /R ] th th Zth(j-a) Zth(j-c) 1 10 100 I (A) TM t (s) p SEMICONDUCTOR 10T Series RoHS RoHS Fig.1 Maximum power dissipation versus RMS on-state current (full cycle) Fig.2 RMS on-state current versus case temperature (full cycle) Fig.3 Relative variation of thermal impedance versus pulse duration Fig.4 On-state characteristics (maximum values) 1 10 100 1000 0 10 20 30 40 50 60 70 I (A) TSM 0.01 0.10 1.00 10.00 10 100 1000 I (A), I t (A s) TSM 2 2 Fig.5 Surge peak on-state current versus number of cycles Fig.6 Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms. 2 and corresponding value of l t Page 4 of 6 I (A) T(RMS) TO-220AB insulated TO-220AB T (°C) c T =25°C j T max j V =0.85V to R =40mΩ d T =T max j j V (V) TM Non repetitive T initial=25°C j Repetitive T =95°C c Number of cycles t=20ms One cycle Tj initial=25°C ITSM l²t t (ms) p dl/dt limitation 50A/µs 9 10 11 12 13 0 1 2 3 4 5 6 7 8 9 10 11 12 1.0 0.5 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 80 90 100 110 0 1 2 3 4 5 6 7 8 9 10 www.nellsemi.com |
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