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16T08A-C Datasheet(PDF) 2 Page - Nell Semiconductor Co., Ltd |
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16T08A-C Datasheet(HTML) 2 Page - Nell Semiconductor Co., Ltd |
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2 / 7 page  16Txxxx Unit I (1) GT I - II - III VGT I - II - III VGD I - II - III (2) IH MAX. I - III MAX. mA II (2) dV/dt MIN. (dI/dt)c(2) MIN. - A/ms - IL MAX. MIN. V = 12 V, R = 33Ω D L V = V , R = 3.3KΩ D DRM L T = 125°C j I = 500 mA T I = 1.2 I G GT V = 67% V gate open ,T = 125°C D DRM j , (dV/dt)c = 0.1 V/µs (dV/dt)c = 10 V/µs Without snubber T = 125°C j T = 125°C j T = 125°C j MAX. 10 50 1.3 0.2 15 55 25 70 30 80 40 1000 8.5 3 14 - mA V V mA V/µs TEST CONDITIONS QUADRANT SYMBOL SW BW - - 35 40 50 60 500 8.5 CW SNUBBERLESS and Logic level (3 quadrants) SEMICONDUCTOR 16T Series RoHS RoHS Page 2 of 7 (T ºC unless otherwise specified) J= 25 ELECTRICAL CHARACTERISTICS A/µs UNIT A 2 A s ºC A A W - 40 to + 150 - 40 to + 125 VALUE 128 50 4 1 160 168 t = 16.7 ms T =125ºC j T =125ºC j t = 20 ms TEST CONDITIONS T = 110ºC c T =125ºC j F =50 Hz F =60 Hz t = 10 ms p F =100 Hz T =20 µs p SYMBOL IT(RMS) ITSM dI/dt PG(AV) I t 2 IGM Tstg Tj ABSOLUTE MAXIMUM RATINGS RMS on-state current (full sine wave) Critical rate of rise of on-state current Operating junction temperature range Non repetitive surge peak on-state current (full cycle, T initial = 25°C) j Average gate power dissipation Storage temperature range 2 I t Value for fusing I = 2xl , t ≤100ns G GT r Peak gate current PARAMETER T = 86ºC c TO-220/TO-263 TO-220insulate 16 Note 1: Minimum l is guaranted at 5% of l max. GT GT Note 2: For both polarities of A2 referenced to A1. www.nellsemi.com |
Similar Part No. - 16T08A-C |
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