12FT08G-T datasheet(4/7 Pages) NELLSEMI

Part #	12FT08G-T

Description	Sensitive and Standard SCRs, 12A

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Manufacturer	NELLSEMI [Nell Semiconductor Co., Ltd]

Direct Link	http://www.nellsemi.com

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SEMICONDUCTOR

RoHS

Page4of7

0.0

0.2

0.4

0.6

0.8

1.6

12PTSeries

0.01

0.10

1.00

Fig.5 Relative variation of thermal impedance

Junctiontoambientversuspulseduration

Fig.6 Relative variation of gate trigger and

holdingcurrentversusjunction

temperatureforI

=200 A

GT

µ

-40

www.nellsemi.com

Fig.3 Average and DC on-state current versus

ambient temperature (DPAK)

Fig.

Relative variation of thermal impedance

4

junction to case versus pulse duration

2.5

2.0

1.5

1.0

0.5

0.0

0

25

50

75

100

125

1

E+0

0.1

0.2

0.5

1.0

I (AV)(A)

T

Fig.

Maximum average power dissipation versus

1

-

average on state current

Fig.2 Average and DC on-state current versus

case temperature

P W

(

)

8

7

6

5

4

3

2

1

0

1

2

4

5

6

10

12

8

14

6

4

2

0

25

50

75

100

125

I

(A)

T(AV)

0

1

E+1

1

E-2

1

E-1

1

E+0

1

E+2

5E+2

1.0

1.2

1.4

1.8

2.0

-20

0

20

40

60

80

100

120

140

1

E+1

1

E+2

1

E+3

I

,I ,I [Tj]/I

,I ,I [Tj=25 C]

GT H L

°

K=[Zth(j-c)/Rth(j-c)]

K=[Zth(j-a)/Rth(j-a)]

α=180°

360°

α

I

(A)

T(AV)

9

10

11

12

3

7

8

9

Tcase(°C)

DC

α=180°

Insulated

TO-220AB

TO-251/TO-252

TO-263/TO-220AB

DevicemountedonFR4with

Recommendedpadlayout

Tamb(°C)

α=180°

DPAK

DC

D²PAK

3.0

tp(s)

D²PAK

TO-220AB/IPAK

DevicemountedonFR4with

Recommendedpadlayout

DPAK

IGT

l &I

H

L

R

=1K

GK

Tj(°C)

(DANK)

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