12FT06H-T datasheet(5/7 Pages) NELLSEMI

Part #	12FT06H-T

Description	Sensitive and Standard SCRs, 12A

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Manufacturer	NELLSEMI [Nell Semiconductor Co., Ltd]

Direct Link	http://www.nellsemi.com

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5 / 7 page

SEMICONDUCTOR

RoHS

Page5of7

12PTSeries

I

(A)

STM

Fig.11 Surge peak on-state current versus

numberofcycles

Fig.12 Non-repetitive surge peak on-state current

andcorrespondingvaluesofl²tversus

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0.1

0

200

400

1.0

Fig.9 Relative variation of dV/dt immunity

versusgate-cathoderesistance

0

0.0

0.5

1.0

1.5

0.0

0.2

4.0

5.0

-20

0

60

20

-40

40

3.5

4.5

100

140

80

120

0.4

dV/dt[R

]/dV/dt[R

=220Ω]

GK

Fig.7 Relative variation of gate trigger and

holdingcurrentversusjunction

temperature

Fig.8 Relative variation of holding current

versusgate-cathoderesistance

(typicalvalues)

dV/dt[C

]/dV/dt[R

=220Ω]

GK

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

1

E-2

1

E-1

1

E+0

1

E+1

600

800

1000

1200

10.0

25

75

50

125

150

100

2.0

2.5

3.0

0.01

10

0

40

30

60

70

90

1

100

1000

20

50

10

80

100

0.10

1.00

10.00

10

100

1000

I [R

]/I [R

=1KΩ]

H

GK

H

GK

I

,I ,I [Tj]/I

,I ,I [Tj=25 C]

GT H L

°

3.0

2.5

2.0

1.5

1.0

0.5

0.0

(Typicalvalues)

Fig.1 Relative variation of dV/dt immunity

0

versusgate-cathodecapacitance

(typicalvalues)forI

=200µA

GT

I

(A),I²t(A²s)

TSM

5mA&15mASeries

IGT

l &I

H

L

Tj(°C)

R

(KΩ)

GK

T =125 C

j

°

V =0.67XV

D

DRM

R

(KΩ)

GK

C

(nF)

GK

V =0.67XV

D

DRM

T =125 C

j

°

R

=220Ω

GK

3.5

4.0

t =10ms

p

Onecycle

Nonrepetitive

T initial=25 C

j

°

Numberofcycles

110

120

130

140

150

Repetitive

Tc=105 C

°

I²t

ITSM

Tjinital=25 C

°

tp(ms)

dI/dtIimitation

2000

200µASeries

T =25 C

j

°

sinusoidalpulsewidth

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