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85FDR08B Datasheet(PDF) 2 Page - Nell Semiconductor Co., Ltd |
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85FDR08B Datasheet(HTML) 2 Page - Nell Semiconductor Co., Ltd |
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2 / 6 page  SEMICONDUCTOR RoHS RoHS Nell High Power Products Page 2 of 6 www.nellsemi.com FORWARD CONDUCTION PARAMETER SYMBOL UNIT TEST CONDITIONS 85FD(R) Maximum average forward current at maximum case temperature IF(AV) 180° conduction, half sine wave IF(RMS) Maximum RMS forward current A 85 ºC 133 A IFRM Maximum peak repetitive forward current 470 Maximum peak, one-cycle non-reptitive surge current IFSM t = 10ms t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms 2 I t Sinusoidal half wave, 100% VRRM 1100 1151 1308 1369 6050 5498 8554 7778 2 A s A A 85543 t = 0.1 ms to 10 ms, no voltage reapplied 2 I √t Maximum l²t for fusing (1) Maximum l²√t for fusing 2 A √s Maximum forward voltage drop T = 125°C J 1.128 V 2.11 85 VFM T = 25°C; J l = 265A FM 1.75 V Maximum value of threshold voltage VF(TO) rF Maximum value of forward slope resistance reapplied, initial T =T maximum J J (1) 2 2 Note : l t for time t =1 t x √ √tx Sinusoidal half wave, 30° conduction mΩ Sinusoidal half wave, no voltage reapplied, initial T =T maximum J J 100% V reapplied, RRM initial T =T maximum J J no voltage reapplied, initial T =T maximum J J SWITCHING 200 PARAMETER SYMBOL UNIT TEST CONDITIONS trr 240 08 to 12 85FD(R) 120 ns 70 500 Typical reverse recovery time T = 25°C, , J I = 1A to V = 30V F R -dl /dt = 100 A/µs F nC 200 Qrr 340 02 to 06 1300 Typical reverse recovered charge T = 25°C, I = 1A to V = 30V, J F R -dl /dt = 100 A/µs F T = 25°C, -dl /dt = 25 A/µs, J F l = π x rated l FM F(AV) T = 25°C, -dl /dt = 25 A/µs, J F l = x rated l FM F(AV) π 50 500 85FD(R)Series T = 25°C, J I = 1A, I = 1.0A, F R I = 250mA (RG#1 CKT) RR |
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