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26T08AI-CW Datasheet(PDF) 5 Page - Nell Semiconductor Co., Ltd

Part # 26T08AI-CW
Description  TRIACs, 25A Sunbberless and Standard
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Manufacturer  NELLSEMI [Nell Semiconductor Co., Ltd]
Direct Link  http://www.nellsemi.com
Logo NELLSEMI - Nell Semiconductor Co., Ltd

26T08AI-CW Datasheet(HTML) 5 Page - Nell Semiconductor Co., Ltd

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SEMICONDUCTOR
RoHS
RoHS
www.nellsemi.com
Page 5 of 6
26T Series
100
1000
3000
-40
-20
0
20
40
60
80
100
120
140
0.0
0.5
1.0
1.5
2.0
2.5
Fig.9 Relative variation of critical rate of decrease
of main current versus (dV/dt)c (typical values).
Fig.7 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10ms.
2
and corresponding value of l t.
Fig.8 Relative variation of gate trigger current,holding
current and latching current versus junction
temperature (typical values).
2
2
l
(A), l t(A s)
TSM
l
,
l ,l [T ] / l
,l ,l [T =25°C]
GT H L
j
GT H L
j
0.4
0.8
1.2
1.6
2.4
2.0
2.2
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
0.1
1.0
10.0
100.0
0.01
0.10
1.00
10.00
Fig.10 Relative variation of critical rate of decrease
of main current versus Tj
0
1
2
3
4
6
5
0
10
20
30
40
50
60
70
80
0
4
8
12
20
16
0
25
50
75
100
125
2
Fig.11 D PAK thermal resistance junction to
ambient versus copper surface under
tab (printed circuit board FR4, copper
thickness: 35µm)
Rth(j-a)(°C/W)
24
32
28
36
40
t (ms)
p
2
I t
ITSM
T initial=25°C
j
dI/dt limitation:
50A/µs
I & I
H
L
IGT
T (°C)
j
CW/BW
B
(dV/dt)c (V/µs)
1.8
1.4
1.0
0.6
T (°C)
j
2
S(cm )
TO-263


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