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55PT10H Datasheet(PDF) 1 Page - Nell Semiconductor Co., Ltd |
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55PT10H Datasheet(HTML) 1 Page - Nell Semiconductor Co., Ltd |
1 / 5 page 2 1 2 3 Page 1 of 5 SEMICONDUCTOR 55PT Series RoHS RoHS Stansard SCRs, 55A Main Features Symbol Value Unit IT(RMS) V /V DRM RRM IGT 55 A V mA 80 600 to 1600 DESCRIPTION www.nellsemi.com The 55PT series of silicon controlled rectifiers are high performance glass passivated technology, and are suitable for general purpose applications, where power handling and power dissipation are critical, such as solid state relay, welding equipment SYMBOL IT(RMS) RMS on-state current full sine wave ITSM Non repetitive surge peak on-state current (full cycle, T initial = 25°C) j A I t 2 2 I t Value for fusing 1352 2 A s dI/dt Critical rate of rise of on-state current 150 IGM Peak gate current PG(AV) Average gate power dissipation Tstg Storage temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 ºC A/µs A A W UNIT VALUE 520 F =50 Hz F =60 Hz t = 20 ms t = 16.7 ms t = 10 ms p F = 60 Hz T =125ºC j T = 125ºC j T = 125ºC j T = 20 µs p Tj ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITIONS V 600 to 1600 T =125ºC j VDRM VRRM Repetitive peak off-state voltage Repetitive peak reverse voltage (180° conduction angle ) 5 2 Average on-state current (180° conduction angle) IT(AV) 35 A TO-3P/TO-247AB TO-220AB/TO-263 T =85°C c T =80°C c Maximum gate power PGM W 10 T =20µs p T = 125ºC j TO-220AB insulated/TO-3P insulated T =85°C c T =80°C c 55 540 Base on a clip assembly technology, they offer a superior performance in surge current capabilities. TO-3P/TO-247AB TO-220AB/TO-263 TO-220AB insulated/TO-3P insulated Maximum peak reverse gate voltage VRGM 5 V T =70°C c T =70°C c TO-220AB non-Insulated) ( TO-3P (non-Insulated) A2 A2 G A1 2 TO-263 (D PAK) A1 A2 G A2 (55PTxxH) (55PTxxA) (55PTxxB) 1 2 3 TO-220AB (lnsulated) TO-3P (Insulated) A1 A2 G (55PTxxAI) (55PTxxBI) TO-247AB (non-Insulated) (55PTxxC) and high power motor control. (G)3 1(A1) (A2) 2 1 2 3 Thanks to their internal ceramic pad, they provide high voltage insulation(2500V ). RMS V = 67% V , t = 200μs, I = 0.3A D DRM p G d /dt = 0.3A/μs IG |
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