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26T06BI-B Datasheet(PDF) 1 Page - Nell Semiconductor Co., Ltd |
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26T06BI-B Datasheet(HTML) 1 Page - Nell Semiconductor Co., Ltd |
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1 / 6 page  www.nellsemi.com Page 1 of 6 SEMICONDUCTOR 26T Series RoHS RoHS G A2 A1 TRIACs, 25A 1 2 3 TO-220AB (lnsulated) (26TxxAI) TO-220AB (non-Insulated) SYMBOL IT(RMS) RMS on-state current (full sine wave) TO-3P UNIT VALUE ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITIONS T = 105ºC c A2 A2 G A1 2 TO-263 (D PAK) (26TxxH) FEATURES APPLICATIONS High current triac Low thermal resistance with clip bonding Low thermal resistance insulation ceramic for insulated TO-220AB & TO-3P package High commutation (4 quadrant) or very High commutation (3 quadrant) capability 26T series are UL certified (File ref: E320098) MAIN FEATURES SYMBOL VALUE UNIT IT(RMS) V /V DRM RRM IGT(Q1) 25 A V mA 35 to 50 600 to 1200 25 A1 A2 G TO-3P (Insulated) (26TxxBI) (26TxxA) A1 A2 G A2 TO-3P (non-Insulated) (26TxxB) Sunbberless and Standard Packages are RoHS compliant Applications include the ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits, etc., or for phase control operation in light dimmers, motor speed controllers, and silmilar. The snubberless versions are especially recommended for use on inductive loads, due to their high commutation performances. The 26T series provides an insulated tab (rated at 2500V ). RMS ITSM Non repetitive surge peak on-state current (full cycle, T initial = 25°C) j A I t 2 2 I t Value for fusing 340 2 A s dI/dt Critical rate of rise of on-state current I = 2xl , t ≤100ns G GT r 50 IGM Peak gate current 4 PG(AV) Average gate power dissipation 1 W A/µs A A 250 260 F =50 Hz F =60 Hz t = 20 ms t = 16.7 ms t = 10 ms p F =100 Hz T =125ºC j T =125ºC j T =125ºC j T =20 µs p TO-220AB insulated T = 75ºC c Tstg Storage temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 ºC Tj TO-263/TO-220AB/TO-3P insulated T = 100ºC c A2 |
Similar Part No. - 26T06BI-B |
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Similar Description - 26T06BI-B |
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