SEMICONDUCTOR

RoHS

RoHS

Page 2 of 3

MAJOR RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise noted)

A

PARAMETER

V

V

SYMBOL

MTP50..A1

UNIT

420

08

560

700

840

600

800

1000

1200

1600

06

12

10

16

1120

600

800

1000

1200

1600

V

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified output current (Fig.1)

Peak forward surge current single sine-wave superimposed on

rated load

Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)

for fusing

RMS isolation voltage from case to leads

Operating junction storage temperature range

2

I t

T ,T

J

STG

2500

1000

50

500

2

A s

A

A

V

ºC

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

A

PARAMETER

V

µA

SYMBOL

MTP50..A1

UNIT

08

06

12

10

16

Maximum instantaneous forward drop per diode

Maximum reverse DC current at rated DC blocking

Typical junction capacitance per diode

300

1000

1.2

5

pF

voltage per diod

TEST

CONDITIONS

F

A

4V, 1MHz

A

THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)

A

PARAMETER

°C/W

SYMBOL

MTP50..A1

UNIT

08

06

12

10

16

Typical thermal resistance

(1) With heatsink

(1)

1.0

(2) Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with

Notes

#10 screw

1

-

Module type: 3 phase Bridge

2

-

Current rating: I

3

-

: V

Voltage code x 10

F(AV)

4

-

Package outline,A1 for “GBPC”package

RRM

Device code

ORDERING INFORMATION TABLE

50

16

A1

MTP

MTP50A1