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8T10G-TW Datasheet(PDF) 5 Page - Nell Semiconductor Co., Ltd |
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8T10G-TW Datasheet(HTML) 5 Page - Nell Semiconductor Co., Ltd |
5 / 7 page www.nellsemi.com Page 5 of 7 SEMICONDUCTOR 8T Series RoHS RoHS 1 10 100 ITM (A) T =25°C j T =T max j j T max. j Vto = 0.85 V Rd = 50 mΩ VTM(V) 0 10 20 30 40 50 60 70 80 90 ITSM (A) Non repetitive T initial=25°C j Repetitive T =100°C c One cycle t=20ms Number of cycles Fig.4 On-state characteristics (maximum values). Fig.5 Surge peak on-state current versus number of cycles. 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1 10 100 1000 0.01 0.10 1.00 10.00 10 100 1000 tp (ms) T initial=25°C j dI/dt limitation: 50A/µs -40 -20 0 20 40 60 80 100 120 140 0.0 0.5 1.0 1.5 2.0 2.5 IGT IH & IL T (°C) j Fig.8-1 Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). Snubberless & Logic Level Types Fig.8-2 Relative variation of critical rate of of main current versus (dV/dt)c Standard Types decrease (typical values). Fig.6 Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms. 2 and corresponding value of l t. Fig.7 Relative variation of gate trigger current,holding current and latching current versus junction temperature (typical values). 2 2 lTSM (A), l t(A s) lGT,lH,lL[T ] / lGT,lH,lL [T =25°C] j j 2 I t ITSM 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c CW/BW TW SW (dV/dt)c (V/µs) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c C B (dV/dt)c (V/µs) 0.1 1.0 10.0 100.0 0.1 1.0 10.0 100.0 |
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