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NKT135A Datasheet(PDF) 3 Page - Nell Semiconductor Co., Ltd |
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NKT135A Datasheet(HTML) 3 Page - Nell Semiconductor Co., Ltd |
3 / 4 page SEMICONDUCTOR TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum peak gate power PGM tp 5 , ms TJ = TJ 10 maximum W Maximum average gate power PG AV ( ) f Hz T = 50 , J = TJ 3 maximum Maximum peak gate current IGM tp 5 , ms TJ = TJ maximum 3 A Maximum peak negative gate voltage - VGT 10 V gate voltage VGT Anode supply V = 6 , resistive load R ; a = 1 TJ = 25 ° C I GT mA Maximum gate voltage that will not trigger VGD TJ = TJ , maximum 66.7% VDRM applied 0.25 Maximum gate current that will not trigger IGD 10 mA Maximum rate of rise of turned on current - dI dt / TJ = 25ºC ,I = 1.5A ,t 0.5 µs GM r ≤ 150 / A s THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction operating temperature range TJ - 40 125 to ° C Maximum storage temperature range TStg - 40 150 to Maximum thermal resistance, junction to ca se per junction RthJC DC operation Maximum thermal resistance, case to heatsink per module RthCS Mounting surface smooth , , flat and greased Mounting torque ± 10 % IAP to heatsink , M6 A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. 4 6 to N.m busbar to IAP , M6 Approximate weight 220 7.05 Case style New INT A PAK - - TRIGGERING J J J = TJ J J - VGT Maximum required DC to trigger a Maximum required DC gate current to trigger = T ° C thCS ORDERING INFORMATION TABLE 1 - Moduletype:NKT for(Thyristor+ Thyristor)module 2 3 - : CurrentratingIT AV ( ) 4 - 100= Voltagecodex VRRM Devicecode NKT ≤ ≤ 0.7~1.8 30~150 V oz. g 0.055 N High Power Products ell Page3of4 RoHS RoHS NKT135A/NKH135A Series 0.2 ° C/W A 4 - Assemblytype,”A” forsolderingtype 16 135 / www.nellsemi.com 3 2 1 NKHfor(Thyristor+Diode)module |
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