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BQ3055DBT Datasheet(PDF) 2 Page - Texas Instruments

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Part # BQ3055DBT
Description  2-Series, 3-Series, and 4-Series Li-Ion Battery Pack Manager
Download  23 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

BQ3055DBT Datasheet(HTML) 2 Page - Texas Instruments

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bq3055
SLUSA91A
– OCTOBER 2010 – REVISED JANUARY 2012
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION
PACKAGE
PACKAGE
ORDERING INFORMATION(1)
PART
DESIGNATOR
MARKING
TA
PACKAGE
TUBE(2)
TAPE AND
NUMBER
REEL(3)
–40°C to 85°C
bq3055
TSSOP-30
DBT
bq3055
bq3055DBT
bq3055DBTR
(1)
For the most current package and ordering information, see the Package Option Addendum at the end of the document, or see the TI
website at www.ti.com.
(2)
A single tube quantity is 50 units.
(3)
A single reel quantity is 2000 units.
THERMAL INFORMATION
bq3055
THERMAL METRIC(1)
TSSOP
UNITS
30 PINS
θJA, High K
Junction-to-ambient thermal resistance(2)
73.1
θJC(top)
Junction-to-case(top) thermal resistance (3)
17.5
θJB
Junction-to-board thermal resistance (4)
34.5
°C/W
ψJT
Junction-to-top characterization parameter (5)
0.3
ψJB
Junction-to-board characterization parameter (6)
30.3
θJC(bottom)
Junction-to-case(bottom) thermal resistance (7)
n/a
(1)
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2)
The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as
specified in JESD51-7, in an environment described in JESD51-2a.
(3)
The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific
JEDEC-standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
(4)
The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB
temperature, as described in JESD51-8.
(5)
The junction-to-top characterization parameter,
ψJT, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining
θJA, using a procedure described in JESD51-2a (sections 6 and 7).
(6)
The junction-to-board characterization parameter,
ψJB, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining
θJA , using a procedure described in JESD51-2a (sections 6 and 7).
(7)
The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific
JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
2
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Copyright
© 2010–2012, Texas Instruments Incorporated
Product Folder Link(s): bq3055


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