UCC27519DBV datasheet(5/24 Pages) TI1

Part #	UCC27519DBV

Description	Single Channel High-Speed, Low-Side Gate Driver

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Manufacturer	TI1 [Texas Instruments]

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UCC27518

UCC27519

www.ti.com

SLUSB33 – MAY 2012

ELECTRICAL CHARACTERISTICS (continued)

VDD = 12 V, TA = TJ = -40°C to 140°C, 1-µF capacitor from VDD to GND. Currents are positive into, negative out of the

specified terminal.

PARAMETER

TEST CONDITION

MIN

TYP

MAX

UNITS

Source/Sink Current

Source/sink peak

ISRC/SNK

CLOAD = 0.22 µF, FSW = 1 kHz

-4/+4

A

current(1)

Outputs (OUT)

VDD = 12 V

50

90

IOUT = -10 mA

VDD-VOH

High output voltage

VDD = 4.5 V

60

130

IOUT = -10 mA

mV

VDD = 12

5

11

IOUT = 10 mA

VOL

Low output voltage

VDD = 4.5 V

6

12

IOUT = 10 mA

VDD = 12 V

5.0

7.5

IOUT = -10 mA

Output pull-up

ROH

resistance(2)

VDD = 4.5 V

5.0

11.0

IOUT = -10 mA

Ω

VDD = 12 V

0.5

1.0

IOUT = 10 mA

Output pull-down

ROL

resistance

VDD = 4.5 V

0.6

1.2

IOUT = 10 mA

Switching Time

tR

Rise time(3)

CLOAD = 1.8 nF

8

12

tF

Fall time(3)

CLOAD = 1.8 nF

7

11

IN+ to output propagation

VDD = 10 V

tD1

6

17

25

delay(3)

7-V input pulse, CLOAD = 1.8 nF

IN- to output propagation

VDD = 10 V

ns

tD2

6

17

24

delay(3)

7-V input pulse, CLOAD = 1.8 nF

EN to output high

tD3

CLOAD = 1.8 nF, 5-V enable pulse

4

12

16

propagation delay(3)

EN to output low

tD4

CLOAD = 1.8 nF, 5-V enable pulse

4

12

19

propagation delay(3)

(1)

Ensured by Design.

(2)

ROH represents on-resistance of P-Channel MOSFET in pull-up structure of the UCC27518 and UCC27519's output stage.

(3)

See timing diagrams in Figure 1, Figure 2, Figure 3 and Figure 4.

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Product Folder Link(s): UCC27518 UCC27519

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