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SP0610T Datasheet(PDF) 2 Page - Siemens Semiconductor Group |
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SP0610T Datasheet(HTML) 2 Page - Siemens Semiconductor Group |
2 / 8 page Semiconductor Group 2 Sep-13-1996 SP 0610T Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air RthJA ≤ 350 K/W Therminal resistance, chip-substrate- reverse side 1) RthJSR ≤ 285 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = -0.25 mA, Tj = 25 °C V(BR)DSS -60 - - V Gate threshold voltage VGS=VDS, ID = -1 mA VGS(th) -1 -1.5 -2 Zero gate voltage drain current VDS = -60 V, VGS = 0 V, Tj = 25 °C VDS = -60 V, VGS = 0 V, Tj = 125 °C IDSS - - -2 -0.1 -60 -1 µA Gate-source leakage current VGS = -20 V, VDS = 0 V IGSS - -1 -10 nA Drain-Source on-state resistance VGS = -10 V, ID = -0.5 A RDS(on) - 7 10 Ω |
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