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ELM16601EA-S Datasheet(PDF) 1 Page - ELM Technology Corporation |
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ELM16601EA-S Datasheet(HTML) 1 Page - ELM Technology Corporation |
1 / 7 page 1 Pin No. Pin name 1 GATE1 2 SOURCE2 3 GATE2 4 DRAIN2 5 SOURCE1 6 DRAIN1 ■Circuit • N-ch • P-ch 7 - ■Pin configuration SOT-26(TOP VIEW) ELM16601EA-S Complementary MOSFET ELM16601EA-S uses advanced trench technology to provide excellent Rds(on) and low gate charge. N-channel P-channel • Vds=30V Vds=-30V • Id=3.4A(Vgs=10V) Id=-2.3A(Vgs=-10V) • Rds(on) < 60mΩ(Vgs=10V) Rds(on) < 135mΩ(Vgs=-10V) • Rds(on) < 75mΩ(Vgs=4.5V) Rds(on) < 185mΩ(Vgs=-4.5V) • Rds(on) < 115mΩ(Vgs=2.5V) Rds(on) < 265mΩ(Vgs=-2.5V) Parameter Symbol N-ch (Max.) P-ch (Max.) Unit Note Drain-source voltage Vds 30 -30 V Gate-source voltage Vgs ±12 ±12 V Continuous drain current Ta=25°C Id 3.4 -2.3 A 1 Ta=70°C 2.7 -1.8 Pulsed drain current Idm 30 -30 A 2 Power dissipation Ta=25°C Pd 1.15 1.15 W Ta=70°C 0.73 0.73 Junction and storage temperature range Tj,Tstg -55 to 150 -55 to 150 °C S2 G2 D2 S1 G1 D1 ■General Description ■Features ■Maximum Absolute Ratings ■Thermal Characteristics Parameter Symbol Device Typ. Max. Unit Note Maximum junction-to-ambient t≤10s Rθja N-ch 78 110 °C/W 1 Maximum junction-to-ambient Steady-state 106 150 °C/W Maximum junction-to-lead Steady-state Rθjl 64 80 °C/W 3 Maximum junction-to-ambient t≤10s Rθja P-ch 78 110 °C/W 1 Maximum junction-to-ambient Steady-state 106 150 °C/W Maximum junction-to-lead Steady-state Rθjl 64 80 °C/W 3 1 3 5 6 2 4 |
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