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ELM34402AA-N Datasheet(PDF) 1 Page - ELM Technology Corporation |
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ELM34402AA-N Datasheet(HTML) 1 Page - ELM Technology Corporation |
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1 / 4 page  1 ELM34402AA-N ■General description ■Features ■Maximum absolute ratings ■Thermal characteristics Parameter Symbol Typ. Max. Unit Note Maximum junction-to-ambient Steady-state Rθja 50 °C/W Parameter Symbol Limit Unit Note Drain-source voltage Vds 30 V Gate-source voltage Vgs ± 20 V Continuous drain current Ta=25°C Id 8 A Ta=70°C 6 Pulsed drain current Idm 32 A 3 Power dissipation Ta=25°C Pd 2.5 W Ta=70°C 1.6 Junction and storage temperature range Tj, Tstg -55 to 150 °C ELM34402AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • Vds=30V • Id=8A • Rds(on) < 20mΩ (Vgs=10V) • Rds(on) < 32mΩ (Vgs=4.5V) 4 - Single N-channel MOSFET ■Pin configuration ■Circuit SOP-8(TOP VIEW) Pin No. Pin name 1 SOURCE 2 SOURCE 3 SOURCE 4 GATE 5 DRAIN 6 DRAIN 7 DRAIN 8 DRAIN 4 3 2 1 5 6 7 8 S G D |
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