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ELM34812AA-N Datasheet(PDF) 2 Page - ELM Technology Corporation |
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ELM34812AA-N Datasheet(HTML) 2 Page - ELM Technology Corporation |
2 / 4 page 2 ELM34812AA-N ■Electrical characteristics Parameter Symbol Condition Min. Typ. Max. Unit Note STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=250μA, Vgs=0V 20 V Zero gate voltage drain current Idss Vds=16V, Vgs=0V 1 μA Vds=16V, Vgs=0V, Tj=55°C 10 Gate-body leakage current Igss Vds=0V, Vgs=±12V ± 100 nA Gate threshold voltage Vgs(th) Vds=Vgs, Id=250μA 0.5 0.8 1.2 V On state drain current Id(on) Vgs=4.5V, Vds=5V 15 A 1 Static drain-source on-resistance Rds(on) Vgs=4.5V, Id=7A 15 21 mΩ 1 Vgs=2.5V, Id=6A 21 35 mΩ Forward transconductance Gfs Vds=5V, Id=7A 37 S 1 Diode forward voltage Vsd If=1A, Vgs=0V 1.2 V 1 Max.body-diode continuous current Is 1.3 A Pulsed current Ism 2.5 A 3 DYNAMIC PARAMETERS Input capacitance Ciss Vgs=0V, Vds=10V, f=1MHz 1082 pF Output capacitance Coss 277 pF Reverse transfer capacitance Crss 130 pF SWITCHING PARAMETERS Total gate charge Qg Vgs=4.5V, Vds=10V, Id=7A 12 19 nC 2 Gate-source charge Qgs 2 nC 2 Gate-drain charge Qgd 3 nC 2 Turn-on delay time td(on) Vgs=4.5V, Vds=10V, Id≈1A Rgen=6Ω 8 16 ns 2 Turn-on rise time tr 8 16 ns 2 Turn-off delay time td(off) 24 38 ns 2 Turn-off fall time tf 8 16 ns 2 Body diode reverse recovery time trr If=5A, dl/dt=100A/μs 15.5 ns Body diode reverse recovery charge Qrr 7.9 nC NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. Ta=25°C Dual N-channel MOSFET 4 - |
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