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ELM34812AA-N Datasheet(PDF) 2 Page - ELM Technology Corporation

Part # ELM34812AA-N
Description  Dual N-channel MOSFET
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Manufacturer  ELM-TECH [ELM Technology Corporation]
Direct Link  http://www.elm-tech.com
Logo ELM-TECH - ELM Technology Corporation

ELM34812AA-N Datasheet(HTML) 2 Page - ELM Technology Corporation

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ELM34812AA-N
■Electrical characteristics
Parameter
Symbol
Condition
Min. Typ. Max. Unit Note
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=250μA, Vgs=0V
20
V
Zero gate voltage drain current
Idss
Vds=16V, Vgs=0V
1
μA
Vds=16V, Vgs=0V, Tj=55°C
10
Gate-body leakage current
Igss Vds=0V, Vgs=±12V
±
100 nA
Gate threshold voltage
Vgs(th) Vds=Vgs, Id=250μA
0.5
0.8
1.2
V
On state drain current
Id(on) Vgs=4.5V, Vds=5V
15
A
1
Static drain-source on-resistance
Rds(on)
Vgs=4.5V, Id=7A
15
21
1
Vgs=2.5V, Id=6A
21
35
Forward transconductance
Gfs Vds=5V, Id=7A
37
S
1
Diode forward voltage
Vsd If=1A, Vgs=0V
1.2
V
1
Max.body-diode continuous current
Is
1.3
A
Pulsed current
Ism
2.5
A
3
DYNAMIC PARAMETERS
Input capacitance
Ciss
Vgs=0V, Vds=10V, f=1MHz
1082
pF
Output capacitance
Coss
277
pF
Reverse transfer capacitance
Crss
130
pF
SWITCHING PARAMETERS
Total gate charge
Qg
Vgs=4.5V, Vds=10V, Id=7A
12
19
nC
2
Gate-source charge
Qgs
2
nC
2
Gate-drain charge
Qgd
3
nC
2
Turn-on delay time
td(on)
Vgs=4.5V, Vds=10V, Id≈1A
Rgen=6Ω
8
16
ns
2
Turn-on rise time
tr
8
16
ns
2
Turn-off delay time
td(off)
24
38
ns
2
Turn-off fall time
tf
8
16
ns
2
Body diode reverse recovery time
trr
If=5A, dl/dt=100A/μs
15.5
ns
Body diode reverse recovery charge
Qrr
7.9
nC
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
Ta=25°C
Dual N-channel MOSFET
4 -


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