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STH51002Z Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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STH51002Z Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
1 / 3 page STH51002Z Siemens Aktiengesellschaft page(1/4) 8/94 1300nm Laser in Coaxial TO-Package • Designed for application in fiber-optic networks • Laser Diode with Multi-Quantum Well structure • Suitable for bit rates up to 1 Gbit/s • Ternary photodiode at rear mirror for monitoring and control of radiant power • Hermetically sealed subcomponent, similar to TO 18 • with integrated Silicon-Optics for high coupling efficiencies Maximum Ratings Output power ratings refer to the optical port. The operating temperature of the submount is identical to the case temperature Module Symbol Values Unit Operating Temperature range at case TC - 40... +85 °C Storage Temperature range Tstg - 40... +85 °C Soldering Temperature tmax = 10 s, 2 mm distance from bottom edge of case TS 260 °C Laserdiode Symbol Values Unit Direct forward current IF max 120 mA Radiant power CW Φ e 10 mW Reverse Voltage VR max 2V Monitor Diode Symbol Values Unit Reverse Voltage VR max 10 V |
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