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Q67000-A5066 Datasheet(PDF) 10 Page - Siemens Semiconductor Group |
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Q67000-A5066 Datasheet(HTML) 10 Page - Siemens Semiconductor Group |
10 / 20 page Semiconductor Group 83 TDA 4605-3 Characteristics TA = 25 ˚C; VS = 10 V Parameter Symbol Limit Values Unit Test Condition Test Circuit min. typ. max. Start-Up Hysteresis Start-up current drain I6E0 0.6 0.8 mA V6 = V6E 1 Switch-on voltage V6E 11 12 13 V 1 Switch-off voltage V6A 4.5 5 5.5 V 1 Switch-on current I6E1 7 1114mA V6 = V6E 1 Switch-off current I6A1 5 1013mA V6 = V6A 1 Voltage Clamp ( V6 = 10 V, IC switched off) At pin 2 ( V6 ≤ V6E) At pin 3 ( V6 ≤ V6E) V2 max V3 max 5.6 5.6 6.6 6.6 8 8 V V I2 = 1 mA I3 = 1 mA 1 1 Control Range Control input voltage V1R 390 400 410 mV 2 Voltage gain of the control circuit in the control range – VR 30 43 60 dB VR = d ( V2S – V2B) / – dV1 f = 1 kHz 2 Primary Current Simulation Voltage Basic value V2B 0.97 1.00 1.03 V 2 Overload Range and Short-Circuit Operation Peak value in the range of secondary overload V2B 2.9 3.0 3.1 V V1 = V1R – 10 mV 2 Peak value in the range of secondary short-circuit operation V2K 2.2 2.4 2.6 V V1 = 0 V 2 Fold-Back Point Correction Fold-back point correction current – I2 300 500 650 µA V3 = 3.7 V 1 |
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