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2743021447 Datasheet(PDF) 7 Page - Freescale Semiconductor, Inc |
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2743021447 Datasheet(HTML) 7 Page - Freescale Semiconductor, Inc |
7 / 21 page AFT09MS031NR1 AFT09MS031GNR1 7 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS — 870 MHz 0 0 VGS, GATE--SOURCE VOLTAGE (VOLTS) Figure 7. CW Output Power versus Gate--Source Voltage 25 0.5 1 1.5 2 2.5 3 4 20 5 15 10 30 4.5 Pin, INPUT POWER (WATTS) 15 16 15.5 0.01 2 ηD Gps 30 50 40 10 20 17.5 17 16.5 18 60 70 80 0.1 Pout VDD = 13.6 Vdc, IDQ = 500 mA f = 870 MHz 1 VDD = 12.5 Vdc Pin =0.3 W 18.5 19 0 Figure 8. Power Gain, CW Output Power and Drain Efficiency versus Input Power VDD = 13.6 Vdc, Pin =0.3 W VDD = 12.5 Vdc, Pin =0.6 W VDD = 13.6 Vdc, Pin =0.6 W 35 40 45 f = 870 MHz VDD = 13.6 Vdc, IDQ = 500 mA, Pout =31 W Avg. f MHz Zsource Ω Zload Ω 870 0.28 -- j0.71 0.98 -- j0.52 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Figure 9. Narrowband Series Equivalent Source and Load Impedance — 870 MHz Input Matching Network Device Under Test Output Matching Network Zsource Zload 50 Ω 50 Ω |
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