RO4350B datasheet(4/21 Pages) FREESCALE

Part #	RO4350B

Description	RF Power LDMOS Transistors

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Manufacturer	FREESCALE [Freescale Semiconductor, Inc]

Direct Link	http://www.freescale.com

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RF Device Data

Freescale Semiconductor, Inc.

AFT09MS031NR1 AFT09MS031GNR1

TYPICAL CHARACTERISTICS

20

1

100

010

5

VDS, DRAIN--SOURCE VOLTAGE (VOLTS)

Figure 2. Capacitance versus Drain--Source Voltage

15

10

0

5

4

2

VDS, DRAIN--SOURCE VOLTAGE (VOLTS)

Figure 3. Drain Current versus Drain--Source Voltage

6

2

VGS =4.0 Vdc

Note: Measured with both sides of the transistor tied together.

4

3

1

10

812

16

14

18

20

TA =25°C

2.5 Vdc

0

Crss

Ciss

Coss

300

6

7

8

9

3.0 Vdc

3.25 Vdc

3.5 Vdc

250

109

90

TJ, JUNCTION TEMPERATURE (°C)

Figure 4. MTTF versus Junction Temperature -- CW

Note:

MTTF value represents the total cumulative operating time

under indicated test conditions.

107

106

104

110

130

150

170

190

210

230

108

105

VDD = 13.6 Vdc

ID =2.6 Amps

3.2 Amps

3.9 Amps

Measured with ±30 mV(rms)ac @ 1 MHz

VGS =0 Vdc

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